Characteristics of gate-all-around silicon nanowire field effect transistors with asymmetric channel width and source/drain doping concentration

Baek, Chang‐Ki; Park, Soo‐Young; Ko, Myung-Dong; Rim, Taiuk; Choi, Sang Won; Jeong, Yoon‐Ha

doi:10.1063/1.4745858

Cited by 5 publications

(1 citation statement)

References 12 publications

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“…15) For conventional and junctionless nanowire FETs, technical computer-aided design (TCAD) simulations using thermionic diffusion transport have shown that the asymmetric gate controllability of the source and drain junctions largely affect the device performance. 16,17) Depending on the channel thickness of the source or drain side, the on=off-current and subthreshold swing can be enhanced or degraded in the nanowire FETs. Thus, studying asymmetric channel thickness in the TFET using the BTBT tunneling transport is critical for the design of the TFETs for various applications.…”

Section: Introductionmentioning

confidence: 99%

Electrical characteristics of tunneling field-effect transistors with asymmetric channel thickness

Kim

Meyyappan

et al. 2017

Jpn. J. Appl. Phys.

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Effects of using asymmetric channel thickness in tunneling field-effect transistors (TFET) are investigated in sub-50 nm channel regime using two-dimensional (2D) simulations. As the thickness of the source side becomes narrower in narrow-source wide-drain (NSWD) TFETs, the threshold voltage (Vth) and the subthreshold swing (SS) decrease due to enhanced gate controllability of the source side. The narrow source thickness can make the band-to-band tunneling (BTBT) distance shorter and induce much higher electric field near the source junction at the on-state condition. In contrast, in a TFET with wide-source narrow-drain (WSND), the SS shows almost constant values and the Vth slightly increases with narrowing thickness of the drain side. In addition, the ambipolar current can rapidly become larger with smaller thickness on the drain side because of the shorter BTBT distance and the higher electric-field at the drain junction. The on-current of the asymmetric channel TFET is lower than that of conventional TFETs due to the volume limitation of the NSWD TFET and high series resistance of the WSND TFET. The on-current is almost determined by the channel thickness of the source side.

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Section: Introductionmentioning

confidence: 99%

Electrical characteristics of tunneling field-effect transistors with asymmetric channel thickness

Kim

Meyyappan

et al. 2017

Jpn. J. Appl. Phys.

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Asymmetric Channel Junctionless Field-Effect Transistors: a MOS Structure Biosensor

Bhuiyan

Subrina

2021

Silicon

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Vertical gate-all-around junctionless nanowire transistors with asymmetric diameters and underlap lengths

Yoon

Rim

Kim

et al. 2014

Applied Physics Letters

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Vertical gate-all-around (GAA) junctionless nanowire transistors (JNTs) with different diameters and underlap lengths are investigated using three-dimensional device simulations. The source-side diameter determines the on-current and drain-induced barrier lowering characteristics, whereas the drain-side diameter controls the band-to-band tunneling current during off-state conditions. The JNTs with short drain-side underlap lengths decrease the source/drain series resistance but increase the off-current values, especially due to large band-gap narrowing effects at the drain extension region. Proper device design of vertical GAA JNTs considering the device structure and underlap is needed to improve both on/off and short channel characteristics.

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Characteristics of gate-all-around silicon nanowire field effect transistors with asymmetric channel width and source/drain doping concentration

Abstract: Articles you may be interested inStatistical variability study of random dopant fluctuation on gate-all-around inversion-mode silicon nanowire fieldeffect transistors Appl.

Cited by 5 publications

References 12 publications

Electrical characteristics of tunneling field-effect transistors with asymmetric channel thickness

Electrical characteristics of tunneling field-effect transistors with asymmetric channel thickness

Asymmetric Channel Junctionless Field-Effect Transistors: a MOS Structure Biosensor

Vertical gate-all-around junctionless nanowire transistors with asymmetric diameters and underlap lengths

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