Characteristics of GaN epilayer grown on Al2O3 with AlN buffer layer by molecular beam epitaxy

Jeon, H. C.; Lee, H.S.; Si, Sang-Gi; Jeong, Y.S.; Na, J.H.; Park, Young S.; Kang, Tae Won; Oh, Jae Eung

doi:10.1016/s1567-1739(02)00143-8

Cited by 7 publications

(1 citation statement)

References 17 publications

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“…It was further notified that application of low temperature GaN (LT-GaN) or AlN layer could reduce misfit dislocations also in other technologies [5]. Nowadays, various materials are applied as a buffer layers including: LT-GaN [5,6,7], HT-GaN [8], AlN [8,9,10] and ZnO [11,12]. Also many complicated techniques have been developed which allowed to reduce the density of threading dislocations in heteroepitaxial GaN layers.…”

Section: Introductionmentioning

confidence: 99%

Impact of the initial stage of deposition conditions on the properties of subsequent GaN Layer

Prazmowska

Szyszka

Serafińczuk

et al. 2007

2007 International Students and Young Scientists Workshop on Photonics and Microsystems

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High temperature gallium nitride (HT-GaN) layers were grown by HVPE (hydride vapor phase epitaxy) method on low temperature GaN (LT-GaN) buffer layers deposited by HVPE or MOVPE method and on double MOVPE LT-GaN/AlN buffers. The (0001) sapphire substrates were applied. The HCl flow rate and deposition time intervals of nucleation layer deposition were varied in the range of 8-10 ml/min and 5-9 min (with step of 2 min) respectively. The nucleation layer was preceded by preheating of the substrate and followed by recrystallization process. Both processes were carried out in NH 3 ambient for 10 min. The main goal of this work was to study the influence of the initial stage of deposition process on the properties of subsequent HVPE HT-GaN layer. Morphology of LT buffer layers and HT-GaN layers were examined by scanning electron microscopy. The optical quality of thick HVPE HT-GaN layers was evaluated by the measurement of photoluminescence spectra. The X-Ray measurements (2θ θ θ θ/ω ω ω ω, ω ω ω ω-002 reflection scans and reciprocal lattice maps) were performed to study the crystallographic quality of HT-GaN layers.

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