Characteristics of film InP layer and Si substrate bonded interface bonded by wafer direct bonding

Matsumoto, Keīichi; Kanaya, Yugo; Kishikawa, Junya; Shimomura, Koichiro

doi:10.1109/cleopr.2015.7375926

Cited by 2 publications

(2 citation statements)

References 4 publications

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“…Several groups have already attempted the direct bonding of InP to Si wafers by virtue of hydrophobic and hydrophilic bonding. This involves the chemical treatment of the surfaces of the two wafers, followed by establishing contact between the wafers and annealing them at high temperatures (above 200 °C) for a long period (over 1 h) to obtain stable and strong bonds. − However, high-temperature annealing is often accompanied by residual thermal stress, which is detrimental to the subsequent processing of the wafers. Although a previous study has succeeded in lowering the annealing temperature to ∼150 °C using plasma-assisted methods, the adverse effects of the annealing process could not be eliminated.…”

Section: Introductionmentioning

confidence: 99%

Room-Temperature Bonding of Indium Phosphide Wafers and Their Atomic Structure at the Bond Interface

Zhang,

Murakami,

Takigawa

2023

ACS Appl. Electron. Mater.

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In this study, we investigated the room-temperature wafer bonding of indium phosphide (InP) and its atomic-scale bond interface formation. The direct bonding of InP/InP wafers via surface-activated bonding (SAB) and room-temperature bonding involving an activated Si atomic layer was compared. Particularly, the bond strength, surface morphology, and atomic structure in the bond interface were investigated. In contrast to SAB, the bonding involving the activated Si atomic layer afforded more than 2-fold increase in bond strength. This is because, unlike that in SAB, the InP surface was not directly irradiated by an Ar fast atomic beam; instead, a layer of activated Si atoms was deposited. Consequently, the surface roughness of the wafers was lower than that obtained using SAB. The atomic structure of the wafer surface was maintained after activation, and atomic contact between the wafers was achieved. The diffusion of In and P into the Si atomic layers affected the bond strength, indicating that the InP–InP bonding in the wafers through an activated Si atomic layer was different from the simple bonding of two Si bulks. Notably, the state of the bond interface obtained via SAB was different from that obtained via SAB of other semiconductor materials. The room-temperature bonding method will be significantly useful in the development of fabrication techniques for the heterogeneous integration of InP-based electronics and photonics.

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Section: Introductionmentioning

confidence: 99%

Room-Temperature Bonding of Indium Phosphide Wafers and Their Atomic Structure at the Bond Interface

Zhang,

Murakami,

Takigawa

2023

ACS Appl. Electron. Mater.

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“…The DFB laser chip and the LiNbO 3 modulator chip are made of different materials. Several methods can be used to in-tegrate laser chips and modulator chips, such as via lenses [8] , through edge coupling [9,10] , through vertical coupling [11,12] , bonding InP chips to Si substrates [13] , utilizing heteroepitaxial growth [14] , using planar lightwave circuits (PLCs) [15] , and so on. Considering the performance, fabrication feasibility, and production cost, in this work a hybrid integrated optical transmitter module was realized by coupling the laser and LiNbO 3 modulator via a lens.…”

Section: Introductionmentioning

confidence: 99%

Optical transmitter module with hybrid integration of DFB laser diode and proton-exchanged LiNbO₃ modulator chip

Wang¹,

He²,

Li³

et al. 2022

J. Semicond.

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In this work, a hybrid integrated optical transmitter module was designed and fabricated. A proton-exchanged Mach–Zehnder lithium niobate (LiNbO3) modulator chip was chosen to enhance the output extinction ratio. A fiber was used to adjust the rotation of the polarization direction caused by the optical isolator. The whole optical path structure, including the laser chip, lens, fiber, and modulator chip, was simulated to achieve high optical output efficiency. After a series of process improvements, a module with an output extinction ratio of 34 dB and a bandwidth of 20.5 GHz (from 2 GHz) was obtained. The optical output efficiency of the whole module reached approximately 21%. The link performance of the module was also measured.

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Characteristics of film InP layer and Si substrate bonded interface bonded by wafer direct bonding

Cited by 2 publications

References 4 publications

Room-Temperature Bonding of Indium Phosphide Wafers and Their Atomic Structure at the Bond Interface

Room-Temperature Bonding of Indium Phosphide Wafers and Their Atomic Structure at the Bond Interface

Optical transmitter module with hybrid integration of DFB laser diode and proton-exchanged LiNbO₃ modulator chip

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Characteristics of film InP layer and Si substrate bonded interface bonded by wafer direct bonding

Cited by 2 publications

References 4 publications

Room-Temperature Bonding of Indium Phosphide Wafers and Their Atomic Structure at the Bond Interface

Room-Temperature Bonding of Indium Phosphide Wafers and Their Atomic Structure at the Bond Interface

Optical transmitter module with hybrid integration of DFB laser diode and proton-exchanged LiNbO3 modulator chip

Contact Info

Product

Resources

About

Optical transmitter module with hybrid integration of DFB laser diode and proton-exchanged LiNbO₃ modulator chip