Characteristics of Dual Polymetal (W/WNx/Poly-Si) Gate CMOS for 0.1 μm DRAM Technology

Kim, Min Su; Chang, Sung-Keun; Kim, Seon-Soon; Choi, Jungi; Hahn, Sang-Hee Lee Dae-Hee; Kim, Hyung-Duck

doi:10.7567/ssdm.1999.a-1-3

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Extended Abstracts of the 1999 International Conference on Solid State Devices and Materials 1999

DOI: 10.7567/ssdm.1999.a-1-3

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Characteristics of Dual Polymetal (W/WNx/Poly-Si) Gate CMOS for 0.1 μm DRAM Technology

Min Su Kim¹,

Sung-Keun Chang²,

Seon-Soon Kim³

et al.

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Characteristics of Dual Polymetal (W/WNx/Poly-Si) Gate CMOS for 0.1 μm DRAM Technology

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