Characteristics of boron δ-doped diamond for electronic applications

El-Hajj, H.; Denisenko, Andrej; Bergmaier, A.; Dollinger, G.; Kubovič, M.; Kohn, E.

doi:10.1016/j.diamond.2007.12.030

Cited by 40 publications

(31 citation statements)

References 15 publications

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“…From the Geant4 simulation of the 400 AMeV iron beam on the 20 g/cm 2 upstream target, isotopes of hydrogen were identified using stopping power (dE/dx) in detector A and kinetic energy of the particle, as shown in Figure 7. Kinetic energy was reconstructed using relativistic kinematics and the simulated ToF between the two sensors [42].…”

Section: Resultsmentioning

confidence: 99%

“…e upstream , while the thickness of the downstream target was 60 g/cm 2 . ese targets were separated by 3.5 meters down the beam.…”

Section: Methodsmentioning

confidence: 99%

“…Diamond is an attractive material because of its many electrical, chemical, and mechanical characteristics [1][2][3][4]. Its consistent application in radiation sensing occurred after synthetic chemical vapor deposition (CVD) growth of diamond was demonstrated to produce consistent and suitable properties [5,6].…”

Section: Introductionmentioning

confidence: 99%

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∆E/∆E Measurements of Energetic Ions Using CVD Diamond Detectors

Alghamdi

Heilbronn

Castellanos

et al. 2018

Journal of Spectroscopy

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Experimental and computational results of a ΔE/ΔE diamond detection system are presented. e ΔE/ΔE detection system was evaluated using energetic proton and iron beams striking thick polyethylene targets at the NASA Space Radiation Laboratory (NSRL) at Brookhaven National Laboratory (BNL). e measured data for diamond sensor A show good agreement with the Geant4 simulation. In addition, simulations have demonstrated the ability to identify hydrogen isotopes using a diamond detection system.

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Section: Resultsmentioning

confidence: 99%

“…e upstream , while the thickness of the downstream target was 60 g/cm 2 . ese targets were separated by 3.5 meters down the beam.…”

Section: Methodsmentioning

confidence: 99%

See 1 more Smart Citation

∆E/∆E Measurements of Energetic Ions Using CVD Diamond Detectors

Alghamdi

Heilbronn

Castellanos

et al. 2018

Journal of Spectroscopy

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“…The δ-doping technique allows to obtain an extremely sharp doping profile and a high-density-doped layer, which is of great interest [5,[25][26][27][28][29]. The potential of this system is formed by a metal-semiconductor contact (Schottky barrier), followed by the n-type δ-doped quantumwell system and another of the p-type.…”

Section: Theoretical Backgroundmentioning

confidence: 99%

TRANSPORT AND ELECTRONIC PROPERTIES OF THE GaAs ALD-FET

Oubram¹,

Gaggero‐Sager²,

Ouadou³

2011

PIER

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Abstract-According to the scaling-down theory, the ALD-FET (Atomic Layer Doping-Field Effect Transistor) structure has attracted a lot of attention in view of its uses for developing devices with very short channels and for achieving very-high-speed operation. Therefore, there is a strong need to obtain an accurate understanding of carrier transport (mobility and conductivity) in such devices. In this work, we report the carrier transport based on the electronic structure of devices. Our results include analytical expressions of both mobility and conductivity. Our analytical expressions for the mobility and conductivity allow us to analyze transport in ALD-FET. We report regions where this device operates in digital and analogue mode. These regions are delimited in terms of intrinsic and extrinsic parameters of the system. The width of the Ohmic region as well as the NDR (Negative Differential Resistance) properties of the system are also characterized.

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“…8 The large dynamical doping range is a key advantage of SIMS to characterize such d-doped layers; in turn, it presents two important limitations: 9 (i) To avoid ion mixing inside the diamond crystal during SIMS operation, a non-trivial DRF (depth resolution function) deconvolution analysis is required, which strongly depends on the species at stake. (ii) The probed region extension averaged the deduced boron related profile.…”

mentioning

confidence: 99%

Boron concentration profiling by high angle annular dark field-scanning transmission electron microscopy in homoepitaxial δ-doped diamond layers

Araújo

Alegre

Piñero

et al. 2013

Applied Physics Letters

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To develop further diamond related devices, the concentration and spatial location of dopants should be controlled down to the nanometer scale. Scanning transmission electron microscopy using the high angle annular dark field mode is shown to be sensitive to boron doping in diamond epilayers. An analytical procedure is described, whereby local boron concentrations above 1020 cm−3 were quantitatively derived down to nanometer resolution from the signal dependence on thickness and boron content. Experimental boron local doping profiles measured on diamond p−/p++/p− multilayers are compared to macroscopic profiles obtained by secondary ion mass spectrometry, avoiding reported artefacts.

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Characteristics of boron δ-doped diamond for electronic applications

Cited by 40 publications

References 15 publications

∆E/∆E Measurements of Energetic Ions Using CVD Diamond Detectors

∆E/∆E Measurements of Energetic Ions Using CVD Diamond Detectors

TRANSPORT AND ELECTRONIC PROPERTIES OF THE GaAs ALD-FET

Boron concentration profiling by high angle annular dark field-scanning transmission electron microscopy in homoepitaxial δ-doped diamond layers

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