Characteristics of Ba-Doped PbS Thin Films Prepared by the SILAR Method

Gülen, Y.

doi:10.12693/aphyspola.126.763

Cited by 22 publications

(7 citation statements)

References 26 publications

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“…The low transmittance coupled with high absorbance of the films position them for photovoltaic solar cell application for solar energy haenessing. Similar results from manganese (Mn), chromium (Cr) and barium (Ba) doped PbS thin films deposited by chemical bath deposition and successive ionic layer adsorption reaction (SILAR) method respectively have been "reported by [20] - [22]".…”

Section: Optical Properties Of the As Deposited (Pbmns) Thin Filmssupporting

confidence: 74%

Study of the Optical, Electrical, Structural and Morphological Properties of Electrodeposited Lead Manganese Sulphide (PbMnS) Thin Film Semiconductors for Possible Device Applications

et al. 2021

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Semiconductor thin films of lead manganese sulphide (PbMnS) have been successfully deposited on florinated tin oxide (FTO) conductive glass substrate using an electrodeposition method. Lead acetate (Pb(CH3COO)2), manganese sulphate (MnSO4.H2O) and thiourea (CH4N2S) were the precursor used for cadmium (Cd2+), manganese (Mn2+) and sulphur (S2-) sources respectively. The concentration of manganese (Mn2+) was varied while keeping the concentrations of Pb2+ and S2- constant at 0.2 M and 0.1 M respectively. The deposited films were annealed at temperature of 250 oC and subjected for optical, electrical, structural and morphological characterizations. The results of the characterizations showed that the deposited thin films of PbMnS have high absorbance, high absorption coefficient throughout VIS and NIR regions. The band gap energy of the films is tuned to the order of 1.9 eV to 2.0 eV and tends to constant as concentration of Mn2+ increased. The electrical properties (electrical resistivity and conductivity) of the films are dependent on the concentration of Mn2+ and film thickness. The range of values of the electrical properties is found to be within the range of values for semiconductor materials. The XRD analysis revealed that the deposited thin films of PbMnS is crystalline but the crystallinity declined with increase in concentration of Mn2+. The SEM morphology showed that the surfaces of the films are highly homogeneous in nature and particle sizes are uniform on the substrate with the majority of the particles been spherical in shape. These observed properties exhibited by the deposited thin films of PbMnS make the films good materials for many optoelectronic and electronic applications such as solar cell, light emitting diode (LED), photodetector etc.

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Section: Optical Properties Of the As Deposited (Pbmns) Thin Filmssupporting

confidence: 74%

Study of the Optical, Electrical, Structural and Morphological Properties of Electrodeposited Lead Manganese Sulphide (PbMnS) Thin Film Semiconductors for Possible Device Applications

et al. 2021

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“…The XRD analysis confirmed the cubic phase and polycrystalline (in nature). The microscope glass slide was used as the substrate during the formation of thin films [83]. The thickness and crystalline size were 480 and 18.6 nm, respectively.…”

Section: Lead Sulfide Filmsmentioning

confidence: 99%

Recent Advances in the Growth and Characterizations of SILAR-Deposited Thin Films

Soonmin

2022

Applied Sciences

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Many researchers have reported on the preparation and characterization of thin films. The prepared thin films could be used in lasers, cathodic ray tubes, solar cells, infrared windows, ultraviolet light emitting diodes, sensors, supercapacitors, biologic applications, and optoelectronic applications. The properties of these thin films strongly depend on the deposition techniques. Throughout the years, many investigations into the production of various types of thin films (by using the successive ionic layer adsorption and reaction (SILAR) method) were conducted. This method attracts interest as it possesses many advantages when compared to other deposition methods. For example, large area depositions could be carried out in any substrates at lower temperatures via inexpensive instruments; moreover, a vacuum chamber is not required, it has an excellent growth rate, and the unique film properties could be controlled. In this work, metal sulfide, metal selenide, metal oxide, and metal telluride were deposited on substrates by using the SILAR method. According to the findings, both thick and thin films could be synthesized under specific conditions during the experiment. Additionally, the results showed that the number of deposition cycles, rinsing times, immersion times, and concentrations of the precursors affected the crystallinities, grain sizes, film thicknesses, surface roughness, and shapes of the obtained films. These films could be used in solar cell applications with high power conversion efficiency due to the appropriate band gap value and high absorption coefficient value.

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“…Effects of manganese dopant on the structure, morphology, and optical properties of the nano lead sulfide thin film have equally been reported by [15] and concluded that Mn doping has structure-properties correlating effects on the nano PbS film and can be used to tune the film's texture in the nano and microcrystalline structure ranges. The influence of Ba doping on the properties of PbS thin films prepared by the SILAR method reported by [16] have shown that Ba-doping concentration has influenced the size of the thin film's nanoparticles and optical bandgap energy of the films were found to increase as Ba-doping concentration is increased. The influence of some other materials including manganese used as dopant on PbS thin films prepared using different deposition methods have been reported as given by [17][18][19].…”

Section: Introductionmentioning

confidence: 99%

Investigation of the Optical, Structural and Compositional Properties of Electrodeposited Lead Manganese Sulfide (PbMnS) Thin Films for Possible Device Applications

et al. 2021

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The properties of PbMnS semiconductor thin films deposited on fluorine-doped tin oxide (FTO) substrate using an electrodeposition method are investigated to determine their possible device applications. Lead acetate, manganese sulfate, and thiourea were used as precursors for sources of lead, manganese, and sulfur ions respectively. The concentration of lead, manganese, and sulfur ions sources with deposition voltage of 1.8 V was kept constant. The films were deposited using three electrodes system of electrodeposition method by varying deposition time. The films were characterized for optical, structural, morphological, and compositional properties and results showed that the absorbance, refractive index, and optical conductivity of the films are high in the visible (VIS) and near-infrared (NIR) regions but decreases in the NIR. These three properties initially increased with an increase in deposition time up to a time of 70 s which has the highest values of these properties before decreasing to lower values. The transmittance and extinction coefficient of the films are low in both VIS and NIR regions. The bandgap energy of PbS was found to be blue shifted with values of 1.51 eV, 1.54 eV, 1.60 eV, 1.45 eV, and 1.35 eV for the films deposited at 30 s, 50 s, 70 s, 90 s, and 110 s respectively. XRD analysis showed that the films are crystalline with sharp peaks positions indexable to crystalline planes of (111), (200), (211), (220), (311) and (400) with average crystallite size in the range of 16.110 nm to 17.218 nm. Energy-dispersive X-ray spectroscopy (EDX) results showed that the films are composed of lead, manganese, and sulfur but there are some impurity elements present mostly as a result of the substrate used. These properties exhibited by the deposited thin films of PbMnS showed that they can be used for many optoelectronic applications such as photovoltaic cells, sensors, photoconductors, etc.

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Characteristics of Ba-Doped PbS Thin Films Prepared by the SILAR Method

Cited by 22 publications

References 26 publications

Study of the Optical, Electrical, Structural and Morphological Properties of Electrodeposited Lead Manganese Sulphide (PbMnS) Thin Film Semiconductors for Possible Device Applications

Study of the Optical, Electrical, Structural and Morphological Properties of Electrodeposited Lead Manganese Sulphide (PbMnS) Thin Film Semiconductors for Possible Device Applications

Recent Advances in the Growth and Characterizations of SILAR-Deposited Thin Films

Investigation of the Optical, Structural and Compositional Properties of Electrodeposited Lead Manganese Sulfide (PbMnS) Thin Films for Possible Device Applications

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