Characteristics of annealed p/n junctions between GaAs and Si (100)

Abstract

Electrical characteristics of GaAs( p)/Si(n) interface were determined from capacitance-voltage (C-V), current-voltage (I-V), and secondary ion mass spectroscopy (SIMS) measurements and compared to those on GaAs( p) epitaxial layes on GaAs(n) substrates. The comparison was made between the junctions as grown and after an anneal at 850 °C for 20 min in 10% forming gas under an As overpressure. For the GaAs/Si junction the ideality factor changed from 2 or larger to 1.5 and the apparent intercept voltage changed from 2.5 to 1.3 V after annealing. For the GaAs homojunction, the intercept voltage increased from 1.1 to 1.3 V. In addition, the excess current in the forward and reverse bias conditions dropped drastically in the heterojunction. No movement of the metallurgical junction was discernible to within the resolution capability of SIMS. The junction properties obtained by annealing suggest an atomic restructuring of the Si(100) interface during growth or annealing. These new results raise the possibility that the GaAs/Si interface can be made into an electrically viable junction and incorporated into active devices.

The formation of GaAs/Si photodiodes by pulsed-laser deposition

“…Most attempts have been tried using molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD). [1][2][3] The overall achieved results, however, do not compare to the standards of the homoepitaxial growth of MBE and MOCVD and it seems that sophisticated epitaxial methods are eventually not the right techniques to conquer the aforementioned mismatches between GaAs and Si. 4 A possible way to overcome the difficulties is an interlayer between GaAs and Si.…”

On the performance analysis and design of a novel shared-layer integrated device using RCE-p-i-n-PD/SHBT

“…We add a resonant cavity to increase quantum efficiency of the monolithically integrated PIN/HBT-Receiver [10] . In resonant cavity enhanced (RCE) structure, electrical properties of the photodetector remain mostly unchanged, however, presence of the microcavity causes wavelength selectivity and a drastic increase of the optical field at resonance wavelengths [11][12] . Faster transit-time limited photodiodes (PD) with thinner absorption regions can maintain high efficiency due to the enhanced optical field [13] .…”