On the performance analysis and design of a novel shared-layer integrated device using RCE-p-i-n-PD/SHBT

Abstract

We have explored the shared-layer integration fabrication of an resonant-cavity-enhanced p-i-n photodector (RCE-p-i-n-PD) and a single heterojunction bipolar transistor (SHBT) with the same epitaxy grown layer structure. MOCVD growth of the different layer structure for the GaAs based RCE-p-i-n-PD/SHBT require compromises to obtain the best performance of the integrated devices. The SHBT is proposed with super-lattice in the collector, and the structure of the base and the collector of the SHBT is used for the RCE. Up to now, the DC characteristics of the integrated device have been obtained.