Characteristics of Al2O3 gate dielectrics partially fluorinated by a low energy fluorine beam

Abstract

The partial fluorination of Al 2 O 3 gate dielectrics was examined by exposing an oxide-nitride-aluminum oxide ͑ONA͒ stack to a low energy fluorine beam, and its effect on the properties of the ONA was investigated. Exposing ONA to about 10 eV fluorine beam resulted in a 5-nm-thick AlO x F y layer on the ONA by replacing some Al-O to Al-F. The electrical properties such as leakage current and memory window characteristics were improved after fluorination of the ONA, possibly due to the improved charge trapping characteristics through the formation of an AlO x F y layer on the Al 2 O 3 without changing the blocking layer thickness.

The Zr Modified γ-Al2O3 Catalysts for Stable Hydrolytic Decomposition of CF4 at Low Temperature

“…This will increase the amount and strength of Lewis acid sites on catalysts, which shows good agreement with the results of NH 3 -TPD and FTIR [33,34]. As showed in Figure 10B, for the fresh catalysts, the Al 2p core level spectra exhibit peaks located at 74.3 eV, which can be ascribed to Al-O bond [35,36]. As showed in Figure 10C, for used catalysts, another set of peaks are located in the range of 75.9 to 76.4 eV, which can be attributed to Al-F bond [35][36][37].…”

Linear-Sweep Thermammetry Study on Corrosion Behavior of Al Current Collector in Ionic Liquid Solvent

“…Second, the Al 2p photoelectron signal is large enough after argon etching ͑10-50 s͒, which can be deconvoluted into three peaks: AlF 3 ͑76.1 eV͒, Al 2 O 3 ͑75.1 eV͒, and Al ͑71.5 eV͒. 12,13 Figure 3a shows that Al 2 O 3 is dominant on the Al electrode cycled in 1.0 M LiTFSI/ PMPyr-TFSI, which can be ascertained from the depth-profiling atomic concentration data ͑Fig. 3c͒, in which the higher population of Al and O ͑oxygen͒ is clearly seen.…”

Fluorination of Al2O3 blocking layer for improving the performance of metal‐oxide‐nitride‐oxide‐silicon flash memory

“…To obtain ideal tunnel layer with SiO 2 /HfO 2 / SiO 2 dielectric stack, fluorine incorporation by fluorine ion implantation at different stages of processing has been fully researched [10]. Recently, fluorination of Al 2 O 3 blocking layer for silicon-oxide-nitride-silicon devices has been investigated by treating Al 2 O 3 with a low-energy fluorine (neutral or ion) beam [11,12]. The study showed that the Al 2 O 3 blocking layer was composed of two layers (AlO x F y and Al 2 O 3 ), and the fluorination of Al 2 O 3 produced lower leakage current and significantly larger C-V hysteresis window, possibly due to defect passivation by fluorine incorporation [11,12].…”

“…Recently, fluorination of Al 2 O 3 blocking layer for silicon-oxide-nitride-silicon devices has been investigated by treating Al 2 O 3 with a low-energy fluorine (neutral or ion) beam [11,12]. The study showed that the Al 2 O 3 blocking layer was composed of two layers (AlO x F y and Al 2 O 3 ), and the fluorination of Al 2 O 3 produced lower leakage current and significantly larger C-V hysteresis window, possibly due to defect passivation by fluorine incorporation [11,12]. It is also demonstrated that plasma process can incorporate F in the ALD-grown Al 2 O 3 film more efficiently than the conventional implantation The characteristics of Al 2 O 3 film grown by atomic-layer deposition as blocking layer with and without fluorine plasma treatment were investigated based on a capacitor structure of Al/Al 2 O 3 /TaON/SiO 2 /Si.…”