Characteristics of Al doped zinc oxide (ZAO) thin films deposited by RF magnetron sputtering

Kobayakawa, Satoshi; Tanaka, Yoshikazu; Ide‐Ektessabi, Ari

doi:10.1016/j.nimb.2006.03.047

Cited by 20 publications

(8 citation statements)

References 13 publications

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“…3) appears at a binding energy of 1022.7 eV which is in close agreement with reported values for the binding energy of zinc in the Zn +2 oxidation state [34,35]. Moreover, the binding energy difference between Zn2p3/2 and Zn2p1/2 signals is 23.5 eV which is a characteristic value of ZnO [36].…”

Section: Characterization Of Zinc Oxide Thin Filmssupporting

confidence: 88%

Characterization of amorphous Pt/ZnO films grown on silicon(100) substrates by a photochemical metal organic deposition and their potential use as gas sensors

et al. 2013

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Section: Characterization Of Zinc Oxide Thin Filmssupporting

confidence: 88%

Characterization of amorphous Pt/ZnO films grown on silicon(100) substrates by a photochemical metal organic deposition and their potential use as gas sensors

et al. 2013

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“…They all show conductivity and transparency in the same range like ITO, but they are much cheaper [224]. Other problems like stability and surface adherence and surface roughness vary strongly for the different oxides and have to be optimised [225,226,236].…”

Section: Other Tco Systemsmentioning

confidence: 99%

Printed Organic Solar Cells

Hoth¹,

Seemann²,

Steim³

et al. 2014

Solar Cell Materials

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“…As a result, ZnO-based transparent conductive film is expected to be a substitute for ITO film. 7,8 Doping Al, Ga, Sn, Ti, Nb and other elements in ZnO materials has become a hot research topic in the field of transparent conductive films. [9][10][11] Among these doping elements, Nb has great potential because the ionic radius of Nb 5þ is 0.64 Å, which is slightly smaller than the ionic radius of Zn 2þ (0.74 Å), 12 revealing theoretically there is a possibility of replacing Zn 2þ with Nb 5þ .…”

Section: Introductionmentioning

confidence: 99%

Structure, optical and electrical properties of Nb-doped ZnO transparent conductive thin films prepared by co-sputtering method

Liu

Wang

et al. 2019

J. Adv. Dielect.

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Nb-doped ZnO thin films were fabricated on glass substrates by using co-sputtering with direct-current and radio frequency magnetron sputtering. The structures, optical and electrical performances of Nb-doped ZnO thin films were investigated. The results showed that all thin films have (0 0 2) c-axis preferential orientation. The minimum resistivity of 2:12 Â 10 À3 Ω cm and the maximum carrier concentration of 2:39 Â 10 19 cm À3 were obtained at the direct-current sputtering power of 10 W, respectively. Nb-doped ZnO thin films have also shown high average transmittance of 89.6%, and lower surface roughness of 2.74 nm. Meanwhile, a distinct absorption edge in the ultraviolet range of 300-400 nm was observed in absorbance, the optical band gap of Nb-doped ZnO thin films illustrates an increased tendency with increasing Nb concentration.

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Characteristics of Al doped zinc oxide (ZAO) thin films deposited by RF magnetron sputtering

Cited by 20 publications

References 13 publications

Characterization of amorphous Pt/ZnO films grown on silicon(100) substrates by a photochemical metal organic deposition and their potential use as gas sensors

Characterization of amorphous Pt/ZnO films grown on silicon(100) substrates by a photochemical metal organic deposition and their potential use as gas sensors

Printed Organic Solar Cells

Structure, optical and electrical properties of Nb-doped ZnO transparent conductive thin films prepared by co-sputtering method

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