Characteristics of a-plane GaN with the SiNx insertion layer grown by metal-organic chemical vapor deposition

Titanium oxide nanoparticles spin-coated onto r-plane sapphire substrate: Effects on structural and optical properties of nonpolar a-plane GaN and InGaN/GaN multiple quantum wells

“…These values suggest that the crystallographic mosaicity reaches the minimum and maximum values along the c-and m-axis, respectively [22]. Although the FWHM anisotropy of the TiO 2 NP-related a-plane GaN was larger than that of the reference sample, the FWHM difference of 54.6 arcsec between the two main in-plane directions is much smaller than that reported previously [23,24]. This reduction in the FWHM anisotropy indicates a decrease in the difference of the in-plane growth rates.…”

Characteristics of a-Plane Green Light-Emitting Diode Grown on r-Plane Sapphire

“…There could be two reasons accounting for the efficiency enhancement. One is the in situ SiN nanomask is employed to reduce the defect density [12]. The other is the thermal effect is eliminated as a result of pulse operation.…”

“…Subsequently, a 1.5-m-thick Si-doped n-GaN with an electron concentration of cm was grown. The in-situ SiN nanomask was inserted between undoped GaN and Si-doped GaN for defect reduction in nonpolar a-plane GaN films [12]. Then, ten pairs of MQWs were grown at a temperature of 780 C and were capped by a 0.17-m-thick p-GaN layer with a hole concentration of cm .…”

Growth and characterization of a-plane AlxGa1−xN alloys by metalorganic chemical vapor deposition

“…During the growth, trimethylgallium (TMGa) and trimethylaluminum (TMAl) were used as group III source materials and ammonia (NH 3 ) as the group V source material. Initially, the two-inch diameter r-plane sapphire substrate was thermal cleaned with hydrogen (H 2 ) at 1080 1C, then a thin SiN x layer was inserted before depositing an approximately 30-nm-thick AlN nucleation layer with V/III ratio of about 14,000 on the substrate at 570 1C, which has been demonstrated to improve the crystal quality of subsequent epilayers [12]. Furthermore, the growth temperature was raised up to 1060 1C and the V/III ratio was about 1500 for growth of a 1.8-mm-think GaN layer.…”