Characteristics and surface analysis of ion beam deposition from binary boron platinum (Pt58B42) liquid-metal ion source

Higuchi‐Rusli, R. H.; Corelli, J. C.; Steckl, A. J.; Han, Jin

doi:10.1063/1.340029

Cited by 2 publications

(1 citation statement)

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“…The electrical properties and lattice disorder of FIB-implanted silicon also have been investigated and compared with broadbeam implantation (9,10). Different source alloys for dopants have been studied by others and the authors, e.g., 12), Pt-B (12)(13)(14), Pd-B (12, 15), Pd-Ni-B (13), and B-Ni-Pt (16) for B; Cu-P (17, 18) and Pd-As-B-P (19) for P; and Pt-As (19), Pd-As (20), and Sn-Pb-As (21) for As. These alloys have usually resulted in short lifetimes and/or small relative abundance of the dopant ions except for a few alloys, which have sometimes provided the same abundance and lifetime as those of the present alloys in Table I.…”

Section: Lmis Structurementioning

confidence: 99%

Development of Liquid‐Metal‐Ion Sources for Focused‐Ion‐Beam Applications

Ishitani

Umemura

Kawanami

et al. 1989

J. Electrochem. Soc.

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Prototype liquid-metal-ion sources (LMIS) have been developed for focused-ion-beam (FIB) applications. The investigation has included commonly used ions such as Ga and In, and others such as B, P, and As, which are dopants in silicon semiconductors. With the addition of new results, the present paper reviews LMIS structure, favorable source materials, LMIS characteristics, and the FIB properties connected with LMIS characteristics.Liquid metal ion sources (LMIS) have attracted increasing interest due to their potential advantages in focusedion-beam (FIB) technology applications such as maskless ion implantation, microfabrication, and microscopies (1, 2). The variety of ion species has been greatly increased by using alloys, as well as pure elements, as the LMIS source material. Prototype LMIS were developed by the authors for ion species ranging from commonly used ions such as gallium (Ga) and indium (In), to others such as boron (B), phosphorus (P), and arsenic (As), which are dopants for silicon. Ion emission of the latter elements is difficult because of several problems associated both with the strong corrosive effect of B on the ion source metal electrode at high temperatures, and the high vapor pressure of P and As. This paper will review LMIS structure, favorable source materials, LMIS characteristics, and an FIB profile related to LMIS characteristics. LMIS StructureThe movable-needle type of LMIS (3) is shown schematically in Fig. 1. It has a ribbon heater with a small aperture to allow the needle emitter to pass through. A small amount of source material is placed on the heater and melted. The needle, which is supported so as to allow precise movement along its axis, is mechanically controlled from outside of the vacuum chamber during LMIS operation.The needle movement plays two important roles. First, before operating the fresh LMIS, the virgin needle is passed into the molten metal to achieve complete wetting. Then, it is pushed through the metal and toward the extractor, keeping the needle apex covered with the molten metal film. In addition to wetting, this approach is useful for recovering the accidentally broken metal film.Second, positioning the needle is useful for lessening ion current drift. Such drift is governed by the ratio of the source material loss at the needle apex to the material inflow along the needle from the source reservoir. This inflow is inversely proportional to several factors such as the viscosity of the molten material, the distance (L) from the heater to the needle apex, and the radius of the curvature at the needle apex (4). The source material loss at the needle apex, on the other hand, is approximately proportional to the total emission flux. Therefore, the L value should be optimized for each LMIS and its operating conditions. After the initial optimization, however, the needle is seldom moved during FIB operation. Due to its flexibility, this movable-needle type of LMIS is widely applicable for many combinations of source and needle materials.The movable-needle type o...

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