Characteristic trapping lifetime and capacitance-voltage measurements of GaAs metal-oxide-semiconductor structures

Abstract

The authors show the implications that the free carrier trapping lifetime has on the capacitance-voltage (CV) characterization method applied to metal-oxide-semiconductor (MOS) structures. It is shown that, whereas the CV characterization method for deducing interface state densities works well for Si, the generally used frequency range of 100Hz–1MHz is much less adapted to GaAs MOS structures. Only interface trapping states in very small portions of the GaAs bandgap are measured with this frequency range, and mainly the very important midgap region is not properly probed. Performing an additional measurement at 150°C on GaAs MOS structures eliminates this problem.

Electrical properties of GaAs metal–oxide–semiconductor structure comprising Al2O3 gate oxide and AlN passivation layer fabricated in situ using a metal–organic vapor deposition/atomic layer deposition hybrid system

“…41 J G -V G characteristics were obtained using an Agilent 4156C precision semiconductor parameter analyzer.…”

“…Energy distributions of D it for the dielectric/GaAs interface were extracted based on the conductance method 9,[40][41][42] from the corresponding C-V and G-V data obtained at various temperatures. Each D it value was calculated assuming 43 where q is the charge of an electron, G p is the parallel conductance estimated from the C-V and G-V data, and ω is the measured pulsation.…”

Temperature and frequency dependent electrical characterization of HfO2/InxGa1−xAs interfaces using capacitance-voltage and conductance methods

“…By varying the measurement temperature, it has been shown to be possible to access interface defects over an increased portion of the semiconductor energy gap and assess their effect on the CV characteristics. 10 tively. This is reduced to Ͻ3% for In 0.53 Ga 0.47 As devices.…”

High-k Gate Stacks on Low Bandgap Tensile Strained Ge and GeSn Alloys for Field-Effect Transistors

“…The effect of thermal carrier generation can be suppressed at low temperatures. The resonance frequency of a trap level, given by Fermi-Dirac statistics, depends mostly on the energy difference with the band edges and on temperature 24 . Figure 3b shows the resonance frequencies of trap levels in Ge calculated by taking into account the temperature dependence of the effective density of states of the conduction and the valence bands, the variation of the Ge bandgap and of the electron thermal velocity.…”