Characteristic modulation of silicon MOSFETs and single electron transistors with a movable gate electrode

Park, J.S.; Saraya, Takuya; Miyaji, Kagami; Shimizu, K.; Higo, Akio; Takahashi, Kazuyuki; Yi, Yuheon; Toshiyoshi, Hiroshi; Hiramoto, Toshiro

doi:10.1109/snw.2008.5418442

Cited by 1 publication

(1 citation statement)

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“…For the encoding of the logic information, suspendedgate nanoelectromechanical systems (NEMS) combined with SETs were suggested in [5], and we previously investigated the design optimization of the gate [6]. The experimental observation of such SET transport modulation via the switching of the NEMS device remains however quite challenging, although a first demonstration has been recently reported [7]. The purpose of this work is to evaluate the potential of the device through simulation.…”

Section: Introductionmentioning

confidence: 99%

Design of New Logic Architectures Utilizing Optimized Suspended-Gate Single-Electron Transistors

Pruvost

Uchida

Mizuta

et al. 2010

IEEE Trans. Nanotechnology

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Abstract-The operation and performances of the suspendedgate single-electron transistor are investigated through simulation. The movable gate is 3-dimensionally optimized so that low actuation voltage (0.4V), fast switching (1 ns) and ultra-low pull-in energy (0.015 fJ) are simulated. A two-state capacitor model based on the 3D results is then embedded with a singleelectron transistor analytical model in a SPICE environment to investigate the operation of the device. Through the control of the Coulomb oscillation characteristics, the position of the movable gate enables a background charge insensitive coding of the information. New circuit architectures with applications in cellular non-linear network and pattern matching are also proposed and simulated.

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Section: Introductionmentioning

confidence: 99%