Characterisation of TiN coatings and of the TiN/Si interface by X-ray photoelectron spectroscopy and Auger electron spectroscopy

Nitrogen plasma pressure influence on the composition of TiNxOy sputtered films

“…However, it is important to note that the N C O /Ti ratio is equal to 1.25 only if the area of the TiN x O y components is taken into account in determining the O 1s and N 1s line deconvolution. This ratio value is very close to the value of 1.2 obtained by other authors 13,32 with TiN layers containing only titanium and nitrogen. This addition to the N C O/Ti ratio (¾0.15) obtained by the total area measurements method may be due to C-N and to C-O atom species not directly involved in the TiN x O y phase.…”

“…This agrees with previous results, which reported that quantification results for TiN x coatings are acceptable after surface erosion. 13 As an illustration, XPS spectra recorded on the sample deposited at a partial nitrogen pressure of 1.8 ð 10 3 mbar before and after 40 min of Ar C bombardment are shown in Fig. 2.…”

Investigation of native oxide removing from HCPA ALD grown GaN thin films surface utilizing HF solutions

“…The Ga3d and O1s XPS analysis of GaN sample after 1 hour of 1:10 HF treatment reveal a dominant subpeak at 532.48±0.1 eV, that corresponds to O-C peak (due to atmospheric contamination) that closely similar to a literature data (532.6 eV) [26,27] and binding energy ∼19.68 eV that represent narrow Ga3d signal. The presence of peak in a binding energy 20.07 eV start to appear, that represent Ga-O binding [28], while second sub peak 19.94 eV increase in intensity.…”

Influence of the plasma nitriding conditions on the chemical and morphological characteristics of TiN coatings deposited on silicon

“…The A5 sample does not present either N1s nor Ti 2p spectra. The most prominent one for all samples (except A4) has a binding energy in the range of 396.4 -396.9 eV, and is associated to TiN [37][38][39][40][41] . The component at lower binding energy (395.5 -395.9 eV) can be attributed to N-C 41 ; the one at 398.2 -398.8 eV, to N-O (in TiO x N y ) 40,41 ; and the one that appears at higher binding energy for some samples could also be related to N-O bonds in an oxynitride compound 41 .…”

“…14). The component at 455.3 -455.5 eV is related to TiN [37][38][39][40][41] ; the one at 456.6 -456.8 eV, to TiO x N y ; the one at 458.5 -458.6 eV, to TiO 2 40,41 .…”