Characterisation of the LPE grown InGaAsP/InP hetero-structures: IR-LED at 1.66 μm used for the remote monitoring of methane gas

Volkov, V. V.; Landuyt, J. Van; Marushkin, K.M.; Gijbels, R.; Férauge, C.; Vasilyev, M.G.; Shelyakin, A. A.; Sokolovsky, Alexander A.

doi:10.1016/s0022-0248(96)01068-8

Cited by 6 publications

(1 citation statement)

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“…The quaternary In 1−x Ga x As y P 1−y materials are some of the best semiconductor materials for optoelectronic devices (light-emitting diodes, lasers, photodiodes, etc) [12] because exact lattice-matched layers can be grown on an InP (InGaAsP/InP) substrate [13][14][15]. However, lattice mismatch is a common problem in heteroepitaxial growth.…”

Section: Introductionmentioning

confidence: 99%

Formation of dipole complexes in protein solutions with low concentrations of heavy metal ions: diagnostics by the method of laser radiation scattering

Петрова¹,

Petrusevich²,

Ten³

2002

Quantum Electron.

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Elastic strain fields at the interface of the epilayer and buffer layer of the InGaAsP/InP heterostructure were characterized by electron backscatter diffraction (EBSD) technology based on scanning electron microscopy. The InGaAsP/InP heterostructure which contained lattice misfit was under a dislocation-free condition. Image quality (IQ) was used as the strain sensitive parameter. From the image quality map and image quality curve, we observed directly the distribution of the elastic strain fields at the interface along the direction perpendicular to the interface as well as the interface structure between the epilayer and buffer layer by transmission electron microscopy and high resolution transmission microscopy.

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Section: Introductionmentioning

confidence: 99%