Characterisation of III–V optoelectronic devices by Internal Second-Harmonic Generation technique

Burn-In Aging Behavior and Analytical Modeling of Wavelength-Division Multiplexing Semiconductor Lasers: Is the Swift Burn-In Feasible for Long-Term Reliability Assurance?

“…The Ith change follows the linear regression line, suggesting the same degradation mechanism without inducing new failure modes. For a given burn-in current density, the Ith change is higher for the l000 micrometer long lasers, likely due to the long cavity and mechanical stress [12][13][14][15][16]. For the long cavity, the number of defects within the laser cavity is likely to be higher.…”

Design-in Reliability for Modern Wavelength-division Multiplex (WDM) Distributed Feedback (DFB) InP Lasers

“…The other factor is mechanical stress. The mechanical stress induced by the oxidation at the interface between the semiconductor and optical coating film was observed in 980 nm high power GaAs lasers (Martin-Martin et al, 2008;Landi et al, 1999). The stress at the laser facet is expected to be significantly less for the InP lasers due to the suppression of facet oxidation.…”

Internal second harmonics of an injection-locked laser diode and its application to laser frequency stabilization

“…Due to the strong absorption of the semiconductor material, the ISH mainly originated from a thin layer near the mirror facet of the laser diode. With such low output power, most of the applications of ISH were only concerned with characterization of the laser diodes [3,4]. Using ISH as spectroscopy light source to probe very strong absorption were also demonstrated in the literatures [5,6].…”