Silicon nitride films have been produced from Sill4 and NH~ by reactive plasma deposition. This paper describes the effect of deposition parameters, i.e., substrate temperature T (100~176 RF power (20-150W), and gas ratio (1-19), on various film properties deposited on III-V semiconductor substrate. A parameter working range has been identified suitable for III-V technology, that is Ts = 300~ RF power P ~ 20W, and ammonia/silane ratio R = 4-9. Under these conditions films have been made with a Si/N ratio of 0.7-1 and a refractive index of 1.9-2. Electrical resistivity greater than 101212 cm at a field of 2 MV/cm, breakdown strength of 3-9 MV/cm at a current of 1 ~A, and a dielectric constant of 7 were observed. The density of interface states for the silicon nitride/InGaAs system was evaluated at 5 -1012 cm -2 eV-1 Si--H and N--H bonds per unit area, evaluated by IR measurements, were very low, especially after an annealing procedure. Excellent step coverage and good adhesion were obtained for ridge and mushroom structure lasers. Finally, a RF power of 50W gives silicon nitride layers particularly stable with temperatures.

Selective reactive ion etching of InGaAs and InP over InAlAs in SiCl4/SiF4/HBr plasmas J. Vac. Sci. Technol. B 13, 2344 (1995); 10.1116/1.588071 New chemistry for selective reactive ion etching of InGaAs and InP over InAlAs in SiCl4/SiF4/HBr plasmas Appl. Selective dry etching of InGaAs and InP over AlInAs in CH4/H2/SF6 Appl.

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