Microelectronics Reliability
 2001
DOI: 10.1016/s0026-2714(00)00219-5
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Characterisation of emitter/base leakage currents in SiGe HBTs produced using selective epitaxy

Amanda Lamb
1
,
J. Schiz
2
,
J. M. Bonar
3
et al.
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Cited by 4 publications
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Characterization of leakage current related to a selectively grown collector in SiGeC heterojunction bipolar transistor structure

Suvar
1
,
Haralson
2
,
Radamson
3
et al. 2004
Applied Surface Science
1
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Characterization of leakage current related to a selectively grown collector in SiGeC heterojunction bipolar transistor structure

Suvar
1
,
Haralson
2
,
Radamson
3
et al. 2004
Applied Surface Science
1
0
0
0
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Defect density in non-selective and selective Si/SiGe structures

Menon
1
,
Bentzen
2
,
Landgren
3
et al. 2002
Journal of Crystal Growth
5
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High Frequency Performance of SiGeC HBTs with Selectively & Non-Selectively Grown Collector

Suvar
1
,
Haralson
2
,
Radamson
3
et al. 2004
Phys. Scr.
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