Characterisation of electron irradiated boron-doped diamond

Charles, SJ; Steeds, John W; Evans, Djf; Lawson, Simon C.; Butler, James E.

doi:10.1016/s0925-9635(01)00552-0

Cited by 11 publications

(7 citation statements)

References 4 publications

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“…In polycrystalline CVD grown BDD, differences in SEM contrast between grains has been observed due to varying levels of boron uptake in different crystallographic faces. 36 In Figs. 2 a Importantly, within and between particles the contrast varies minimally suggesting homogenous boron doping throughout, not unexpected given the prevalence of octahedral {111…”

Section: Materials Characterizationmentioning

confidence: 98%

High Pressure High Temperature Synthesis of Highly Boron Doped Diamond Microparticles and Porous Electrodes for Electrochemical Applications

Wood¹,

Newton²,

Shkirskiy³

et al. 2020

Preprint

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High pressure high temperature (HPHT) synthesis of crystallographically well-defined boron doped diamond (BDD) microparticles, suitable for electrochemical applications and using the lowest P and T (5.5 GPa and 1200°C) growth conditions to date, is reported. This is aided through the use of a metal (Fe-Ni) carbide forming catalyst and an aluminum dibromide (AlB2) boron source. The latter also acts as a nitrogen sequester, to reduce boron-nitrogen charge compensation effects. Raman microscopy and electrochemical measurements on individual microparticles reveal they are suitably doped to be considered metallic-like and contain negligible sp2 bonded carbon. A compaction process is used to create macroscopic porous electrodes from the BDD microparticles. Voltammetric analysis of the one-electron reduction of Ru(NH3)63+ reveals large capacitive and resistive components to the current-voltage curves, originating from solution trapped within the porous material. Scanning electrochemical cell microscopy (SECCM) is employed to map the local electrochemical activity and porosity at the micron scale. These electrodes retain the advantageous properties of polycrystalline BDD grown by chemical vapor deposition, such as large aqueous solvent window and resistance to corrosion, but with the additional benefits of a high, electrochemically accessible, surface area.

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Section: Materials Characterizationmentioning

confidence: 98%

High Pressure High Temperature Synthesis of Highly Boron Doped Diamond Microparticles and Porous Electrodes for Electrochemical Applications

Wood¹,

Newton²,

Shkirskiy³

et al. 2020

Preprint

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show abstract

“…There are some grains and boundaries showing lower conductivity (see the grains at the middle of the upper edge and lower left corner of Figure 4A and B). One reason for the heterogeneous conductivity over the film is variability in the boron-doping in different growth sectors of the film (79, 109, 110). …”

Section: Characterization Of Bdd Thin Filmsmentioning

confidence: 99%

Boron-doped diamond nano microelectrodes for biosensing and in vitro measurements

et al. 2011

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Since the fabrication of the first diamond electrode in the mid 1980s, repid progress has been made on the development and application of this new type of electrode material. Boron-doped diamond (BDD) electrodes exhibit outstanding properties compared to oxygen-containing sp2 carbon electrodes. These properties make BDD electrodes an ideal choice for use in complex samples. In recent years, BDD microelectrodes have been applied to in vitro and in vivo measurements of biological molecules in animals, tissues and cells. This review will summarize recent progress in the development and applications of BDD electrodes in bio-sensing and in vitro measurements of biomolecules. In the first section, the methods for BDD nanocrystalline diamond film deposition and BDD microelectrodes preparation are described. This is followed by a description and discussion of several approaches for characterization of the BDD electrode surface structure, morphology, and electrochemical activity. Further, application of BDD microelectrodes for use in the in vitro analysis of norepinephrine (NE), serotonin (5-HT), nitric oxide (NO), histamine, and adenosine from tissues are summarized and finally some of the remaining challenges are discussed.

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“…In Ref. 12 we investigated the dependence of 636, 666 nm, and GR1 luminescence intensities on temperature for two different 488 nm laser powers. We now examine the relationship between these three PL lines in greater detail, making use of the mapping facility of our low temperature photoluminescence microscope and the HPHT crystals.…”

Section: Fig 3 Graphs Illustrating the Growth Of Integrated Intensimentioning

confidence: 99%

“…However, in the doping range 10 17 -10 19 cm Ϫ3 interesting, but poorly understood, optical centers can be introduced by energetic electron irradiation ͑energies տ200 keV͒. 4 Evidence has been presented that one of these centers is connected with a positive vacancy in diamond 6 although other researchers have identified a different center with the positive vacancy 7 and neither center has a transition energy close to the calculated energy of emission. 8 The aim of this work is to build on the preliminary investigations, referred to earlier, 2,4 of the optical centers introduced into B-doped diamond by near-displacement threshold electron irradiation.…”

Section: Introductionmentioning

confidence: 96%

“…3 On examination by scanning electron microscopy this leads to images that change dramatically over time as previously described. 4 As the B-doping level increases the room temperature photo-and cathodoluminescence of the material changes from blue to green, probably on account of donor-acceptor pair emission. 5 For very high B-doping levels, Ͼ10 19 cm Ϫ3 , little luminescence can be excited.…”

Section: Introductionmentioning

confidence: 99%

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Optical centers introduced in boron-doped synthetic diamond by near-threshold electron irradiation

Charles

Steeds

Butler

et al. 2003

Journal of Applied Physics

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Defect structure and electron field-emission properties of boron-doped diamond filmsNear-threshold irradiation of B-doped synthetic diamonds has been performed using a transmission electron microscope operated at 200 kV. Both chemical vapor deposited and high-pressure high-temperature synthesized samples have been studied. The B levels were in the range 10 17 -10 19 cm Ϫ3 . After irradiation the samples were studied by low temperature (ϳ7 K) photoluminescence spectroscopy using various excitation wavelengths. A number of characteristic optical centers have been observed in the spectral range 500-800 nm and these centers are reviewed. Details of the properties of the optical centers have been investigated and the results are summarized. In particular, two zero-phonon lines ͑ZPLs͒ at 636 and 666 nm, formed in boron-doped diamond materials after near displacement-threshold electron radiation damage, were found to be related. The nature of this relationship is studied by laser power dependence ͑at different wavelengths͒ of their intensities over a wide temperature range. The results are interpreted in terms of a three-level model for a single optical center that involves a dipole-forbidden excited state of lower energy and a dipole-allowed state of 90 meV higher energy. Similar behavior of a further pair of ZPLs at 650 and 668 nm also formed in these materials is discussed. The spatial distribution of centers and their alteration by ultraviolet excitation was used to investigate the nature of the 636 and 666 nm centers.

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Characterisation of electron irradiated boron-doped diamond

Cited by 11 publications

References 4 publications

High Pressure High Temperature Synthesis of Highly Boron Doped Diamond Microparticles and Porous Electrodes for Electrochemical Applications

High Pressure High Temperature Synthesis of Highly Boron Doped Diamond Microparticles and Porous Electrodes for Electrochemical Applications

Boron-doped diamond nano microelectrodes for biosensing and in vitro measurements

Optical centers introduced in boron-doped synthetic diamond by near-threshold electron irradiation

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