Characterisation of CVD grown diamond and its residual stress state

Hempel, Max; Härting, M.

doi:10.1016/s0925-9635(99)00028-x

Cited by 19 publications

(7 citation statements)

References 6 publications

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“…Thus, as discussed above, the main argument for the stress release could be based on the strong increase in the thermal expansion of diamond with boron addition. Due to carbon impurities, there might be some additional induced surface stress, which is most visible in Figure 1 c and in some parts of Figure 3 c. The contribution of such impurities to the surface stress in the case of heavily doped samples can be explained by the known phenomenon of their accumulation at the boundaries of BDD crystallites [ 8 , 20 , 21 , 22 , 23 ]. The presence of only nanocrystallites in the undoped sample is thus also likely to play a role in the formation of the relatively high amount of sp 2 carbon observed in this case.…”

Section: Resultsmentioning

confidence: 99%

“…Other contributing factors that affect the residual stress induced in the grown material and its other properties are the shape of the substrate, the growth temperature, and the feed gas pressures employed during fabrication [ 7 , 8 , 9 , 10 , 11 , 12 , 13 , 14 , 15 , 16 , 17 , 18 , 19 , 20 , 21 ]. Previous studies on synthetic diamond showed that the residual stress has two main components: The intrinsic stress and the extrinsic stress [ 14 , 15 , 16 , 17 , 18 ].…”

Section: Introductionmentioning

confidence: 99%

“…Although other techniques have been employed in analyses of residual stress such as X-ray diffraction [ 20 , 21 ] and the curvature technique [ 16 ], Raman spectroscopy still remains the most used method for this type of characterization. One reason is that the Raman technique provides knowledge of the composition of the material at a molecular level, as well as an evaluation of internal stress through the diamond Raman peak shifts.…”

Section: Introductionmentioning

confidence: 99%

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Raman Microscopic Analysis of Internal Stress in Boron-Doped Diamond

et al. 2015

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Analysis of the induced stress on undoped and boron-doped diamond (BDD) thin films by confocal Raman microscopy is performed in this study to investigate its correlation with sample chemical composition and the substrate used during fabrication. Knowledge of this nature is very important to the issue of long-term stability of BDD coated neurosurgical electrodes that will be used in fast-scan cyclic voltammetry, as potential occurrence of film delaminations and dislocations during their surgical implantation can have unwanted consequences for the reliability of BDD-based biosensing electrodes. To achieve a more uniform deposition of the films on cylindrically-shaped tungsten rods, substrate rotation was employed in a custom-built chemical vapor deposition reactor. In addition to visibly preferential boron incorporation into the diamond lattice and columnar growth, the results also reveal a direct correlation between regions of pure diamond and enhanced stress. Definite stress release throughout entire film thicknesses was found in the current Raman mapping images for higher amounts of boron addition. There is also a possible contribution to the high values of compressive stress from sp2 type carbon impurities, besides that of the expected lattice mismatch between film and substrate.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Raman Microscopic Analysis of Internal Stress in Boron-Doped Diamond

et al. 2015

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“…Thus, the direct impact of the in-plane residual stress || on the lattice strains " hkl jj parallel to the film is detectable; details are given in x3.4. The results obtained under grazing diffraction conditions are compared with those gained from micro-Raman spectroscopy analysis, which appeared to be a reliable complementary method for the characterization of residual stress in thin diamond films (Mohrbacher et al, 1996;Ferreira et al, 2003;Gray et al, 1995;Hempel & Hä rting, 1999).…”

Section: Introductionmentioning

confidence: 99%

Residual stress analysis of diamond-coated WC–Co cutting tools: separation of film and substrate information by grazing X-ray diffraction

et al. 2013

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Chemical vapour deposition (CVD) of diamond surface layers is an effective way of improving the properties of cemented carbide cutting tools. Inadequate coating adhesion is one of the main issues and it may be affected by the residual stresses of the CVD diamond films. The most common methods for nondestructive residual stress analysis are based on X-ray diffraction. The present paper deals with the particular case of determining the residual stress state of thin CVD diamond layers deposited on cobalt cemented tungsten carbide (WC-Co) substrates. It will be shown that the application of the conventional sin 2 method might lead to erroneous results, as a result of superimposing diffraction lines originating from cobalt and the diamond coating. An approach to separating information on the substrate and film, based on grazing conditions in the symmetrical É mode of diffraction, is presented. The results, revealing large compressive stresses within the coating, are compared with those obtained by supplementary micro-Raman spectroscopy investigations.

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“…The most common methods to determine the residual stress in diamond films are the substrate curvature technique, 6 x-ray diffraction 7,8 and Raman. 9 Particularly, Raman spectroscopy is a simple method that evaluates the residual stress through the diamond Raman peak shifts.…”

Section: Introductionmentioning

confidence: 99%

Analysis of residual stress in diamond films by x-ray diffraction and micro-Raman spectroscopy

Ferreira

Abramof

Leite

et al. 2002

Journal of Applied Physics

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We investigate the residual stress in diamond films grown on ͑001͒ silicon substrates as a function of film thickness. The diamond films were deposited at 1070 K by the conventional hot filament technique using a gas mixture of methane ͑1.0% vol͒ and hydrogen ͑99.0% vol͒. The film thickness, obtained from cross section scanning electron micrographs, varied from 3.0 to 42 m as the growth time increased from 1 to 10 h. These images evidenced that the columnar growth is already established for films thicker than 10 m. Top view micrographs revealed predominantly faceted pyramidal grains for the films at all growth stages. The grain size, obtained from these images, was found to vary linearly with film thickness. Using a high resolution x-ray diffractometer, the residual stress was determined by measuring, for each sample, the ͑331͒ diamond Bragg diffraction peak for ⌿ values ranging from Ϫ60°to ϩ60°, and applying the sin 2 method. For the micro-Raman spectroscopy, we used the summation method, which consists in recording and adding a large number of spectra in different places of a selected area of the sample. All Raman spectra were fitted with Lorentzian lines to separate the contribution of the pure diamond and the other nondiamond ͑graphite͒ phases. This spectral analysis performed in each sample allowed the determination of the residual stress, from the diamond Raman peak shifts, and also the diamond purity, which increases from 70% to 90% as the thickness goes from 3 to 42 m. The type and magnitude of the residual stress obtained from x-ray and micro-Raman measurements agreed well for films thicker than 10 m. For films thinner than this value, an opposite behavior between both results was observed. We attributed this discrepancy to the domain size characteristic of each technique.

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Characterisation of CVD grown diamond and its residual stress state

Cited by 19 publications

References 6 publications

Raman Microscopic Analysis of Internal Stress in Boron-Doped Diamond

Raman Microscopic Analysis of Internal Stress in Boron-Doped Diamond

Residual stress analysis of diamond-coated WC–Co cutting tools: separation of film and substrate information by grazing X-ray diffraction

Analysis of residual stress in diamond films by x-ray diffraction and micro-Raman spectroscopy

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