Characterisation and modelling of the mismatch of TCRs and their effects on the drift of the offset voltage of piezoresistive pressure sensors

Evaluation of p-type polysilicon piezoresistance in a full-bridge circuit for surface stress sensors

“…Similarly, the V out (T) calculated by a full-bridge expression [19] is also shown in Fig. 8 when the minimum values of a and b are substituted into another half-bridge model.…”

“…Even though the piezoresistive polysilicon has good thermal stability, the nonzero output voltage for a balanced full-bridge circuit, also called the offset voltage, caused by the mismatch of the temperature coefficient of resistance (TCR) of each piezoresistor, is still found [19]. To further explore the TCR mismatch, the resistance of each piezoresistor as a function of temperature is described as…”

“…where T 0 is a reference temperature, and a and b are the ture dependence of the offset voltage can be modeled by a half-bridge expression [19] V out ðTÞ…”

Preliminary evaluation of the influence of the temperature on the performance of a piezoresistive pressure sensor based on a-SiC film

“…In order to predict the thermal behaviour of the sensor, a theoretical analysis based on the theoretical model developed by Boukabache et al (2000) for silicon pressure sensor, it has been adapted for SiC piezoresistors.…”

“…We consider that at a given temperature (T), the resistance of each a-SiC piezoresistor can be calculated by the expression (Boukabache et al 2000).…”