2004
DOI: 10.1016/j.optcom.2004.06.058
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Characterisation and modelling of a silicon-on-insulator non-linear photoconductive switch

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Cited by 1 publication
(13 citation statements)
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“…The distances between the doped areas and between the electrodes are respectively 14 and 24 µm. When illuminating the photoconductor structure [1], we apply a positive voltage between the electrodes, the result is a photocurrent which is expressed according to the lifetime of carriers [1,2]. On the contrary, the photodiode is reverse biased, the photocreated carriers are separated by the intense electric field in the space charge area.…”
Section: Presentation Of the Devicementioning
confidence: 99%
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“…The distances between the doped areas and between the electrodes are respectively 14 and 24 µm. When illuminating the photoconductor structure [1], we apply a positive voltage between the electrodes, the result is a photocurrent which is expressed according to the lifetime of carriers [1,2]. On the contrary, the photodiode is reverse biased, the photocreated carriers are separated by the intense electric field in the space charge area.…”
Section: Presentation Of the Devicementioning
confidence: 99%
“…The optical nonlinearities of the electronic origin result of the photocreation of a plasma with electron-hole pairs with a density of δ N (t). This is explained by a variation of the index of electronic origin [2] δn e = K e δ N (t) .…”
Section: Modelling Of Nonlinear Regimementioning
confidence: 99%
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