Characterisation and lattice location of nitrogen and boron in homoepitaxial CVD diamond

Effect of the N/C Ratios of Ammonia Added to Process Gas Mixtures on the Morphology and Structure of MPCVD Diamond Films

“…These observations indicate a very low and undetectable concentration of N atoms in the films. This phenomenon has also been observed in previous studies of N-doped diamond synthesis [11,12] and implies the low deposition efficiency of N addition. (0.1%) and it presents here as a reference.…”

“…The findings of the studies indicate that N addition can lead to a high growth rate of the films [8][9][10], but a low deposition efficiency [11,12]. However, many different results have been reported regarding the influence of N addition on the film morphology and the diamond quality, with reports of N addition benefiting the growth of the (100) facet surface [9,11,[13][14][15][16][17][18], producing films without any preferred orientation of the surface facets [12,19,20] and improving diamond quality [13,16,21] or leading to a higher sp 2 fraction in the deposited material [19,20]. These different results are highly dependent on the process parameters and the N/C atomic ratio in the process gas mixture.…”

Controlled incorporation of mid-to-high Z transition metals in CVD diamond

“…This is a surprising result in view of the pronounced impurity level/growth sector dependence generally observed for synthetic diamond. For example, boron and nitrogen impurities in CVD diamond are preferentially incorporated in the {111} growth sector, and the impurity level found in the {100} growth sector is lower by at least a factor of three [29][30][31]. Similarly, Ni impurities in HPHT diamond have been found to be concentrated in {111} growth sectors [10].…”

A Brief Review on theIn SituSynthesis of Boron-Doped Diamond Thin Films

“…This leads to the incorporation of boron atoms into both the growing {100} and {111} diamond thin film surfaces. It was found that there is preference (almost 10 times) in the incorporation of boron in {111} growth sectors [28][29][30]. Boron substitution, diamond crystallinity, and diamond surface morphology are closely related and greatly influence each other during the in situ synthesis of BDD thin films [66,67].…”

“…The conductivity of diamond thin films can be attuned to an application requirement typically by carrying out suitable doping events. Amongst the available conductive (doped, p-and n-type [9][10][11][12][13][14][15][16]) diamond thin films, the p-type semiconducting boron-doped diamond (BDD) thin films [17][18][19][20][21][22][23][24][25][26][27][28][29][30][31][32][33][34][35] are the most popular ones and are being studied extensively. BDD thin films are synthesized by substituting some of the sp 3 hybridized carbon atoms in the diamond lattice with boron atoms.…”