Chapter 9 Structural Defects in Epitaxial III/V Layers

Liliental‐Weber, Z.; Sohn, Hyunchul; Washburn, J.

doi:10.1016/s0080-8784(08)62805-7

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Cited by 5 publications

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“…A further variable in the metamorphic buffer is the thickness of the step-graded structure. It has been shown that increasing the thickness of the metamorphic buffer improves the quality of the structure [16,17]. Samples F-H were grown at a temperature of 480 • C with sample F having a step thickness of 100 nm, sample G having a step thickness of 50 nm and sample H having a step thickness of 50 nm and containing a 50 nm layer of LT-InP.…”

Section: Resultsmentioning

confidence: 99%

Improved InAsP metamorphic layers grown on an InP substrate using underlying InP grown at low temperatures

Czaban¹,

Thompson²,

Robinson³

2007

Semicond. Sci. Technol.

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The use of an InP epitaxial layer grown at low temperatures before the growth of a step-graded InAsP metamorphic buffer has been shown to provide a large improvement in the crystal quality of the final metamorphic layer. The improvement is evidenced by over an order of magnitude increase in photoluminescence intensity as well as a large reduction of the mosaic spread and the overall tilt of the relaxed layers.

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Section: Resultsmentioning

confidence: 99%