Chapter 7 Phenomena in Solid Solutions

Goryunova, N. A.; Kesamanly, F. P.; Nasledov, D. N.

doi:10.1016/s0080-8784(08)60348-8

Cited by 17 publications

(15 citation statements)

References 37 publications

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“…Our results seem to be in agreement with the data of [8]. In the crystals obtained at large cooling rate an additional energy dispersion of carriers may appear.…”

Section: Microhardness and Electric Propertiessupporting

confidence: 92%

“…As to the number of acceptors in this case, it is determined by the number of defects [8], and in Table 3 it is to be seen that a noticeable increase of the carrier concentration with disordering is not observed. Therefore probably diminishing of mobility is mostly caused by the two former reasons.…”

Section: Microhardness and Electric Propertiesmentioning

confidence: 93%

“…In the paper [8] the electroconductivity and Hall coefficient were investigated in a wide temperature region on the crystals 5 and 50. To crystals 50 the sphalerite structure was then attributed.…”

Section: Microhardness and Electric Propertiesmentioning

confidence: 99%

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The Structure and Properties of the Semiconducting Compound ZnSnP₂

Vaipolin

Goryunova

Kleshchinskii

et al. 1968

Physica Status Solidi (b)

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A. A. V m m et al.: The Structure and Properties of ZnSnPs 435 phys. stat. sol. 29, 435 (1968) A d e m y of Sciences of the USSR, Leningrad The Structure and Properties of the Semiconducting Compound ZnSnP, BY A. A. V m o m , N. A. GORYUNOVA, L. I. KLESHCEIINSKII, G. V. LOSHAEOVA, and E. 0. O s w o vThe position of the P-atom in the ordered structure of chalcopyrite type ZnSnP, is determined: X = 0.239. Crystals with various degrees of ordering are obtained by varying the cooling rate of the melt during growth. The partly ordered crystals show a mosaic structure and consist of blocks having chalcopyrite or sphalerite structure. The dependence of the degree of ordering on the cooling rate is established. From measurements at room and liquid nitrogen temperature the Debye temperature is found to be the same for crystals with different degree of ordering. The mean-square displacements of atoms as well as the microhardness increase with disordering, and may be related to defect formation. A decrease in the Hall mobility of holes is directly connected with the degree of disordering.Die Lage des P-Atoms in ZnSnP, mit geordneter Chalkopyritstruktur wird bestimmt: X = 0,239. Kristalle mit verschiedenem Ordnungsgrad wurden durch Variation der Abkiihlgeschwindigkeit der Schmelze wiihrend der Ziichtung erhalten. Die teilweise geordneten Kristalle besitzen Mosaikstruktur und bestehen aus Blockchen mit Chalkopyritoder Sphaleritstruktur. Die Abhiingigkeit des Ordnungsgrades von der Abkiihlgeschwindigkeit wird festgestellt. Aus Messungen bei Raumtemperatur und der des flussigen Stickstoffs wird gefunden, daD die Debye-Temperatur fur Kristalle mit unterschiedlichem Ordnungsgrad gleich ist. Sowohl die mittleren Quadrate der Atomverlagerungen als auch die Mikrohiirte wachsen mit zunehmender Fehlordnung und konnen zu der Defektbildung in bezug gesetzt werden. Die Zunahme der Hallbeweglichkeit der Locher ist direkt rnit dem Fehlordnungsgrad verbunden.

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“…Our results seem to be in agreement with the data of [8]. In the crystals obtained at large cooling rate an additional energy dispersion of carriers may appear.…”

Section: Microhardness and Electric Propertiessupporting

confidence: 92%

Section: Microhardness and Electric Propertiesmentioning

confidence: 93%

See 1 more Smart Citation

The Structure and Properties of the Semiconducting Compound ZnSnP₂

Vaipolin

Goryunova

Kleshchinskii

et al. 1968

Physica Status Solidi (b)

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“…The opinion on the presence of this peak is divided [8][9][10][11][12]. In this study, we demonstrate that transport properties can be well described by impurity band model proposed by Isomura and Tomioka [11,12].…”

supporting

confidence: 58%

Impurity band conduction and negative magnetoresistance in p‐ZnSnAs₂ thin films

Asubar¹,

Yang

Uchitomi

2009

Phys. Status Solidi (c)

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The previously reported transport properties data of the undoped ZnSnAs2 grown on semi‐insulating InP substrates by molecular beam epitaxy (MBE) have been reviewed and analysed. We have found out that the temperature dependence of Hall coefficient and resistivity can be well explained by the impurity band model proposed by Isomura and Tomioka. By using the said model, we were able to resolve the experimentally obtained carrier concentration pexp and mobility μexp into valence band carrier concentration pv with mobility μv and acceptor band carrier concentration pa with mobility μa. The computed apparent values papp and μapp are in good agreement with pexp and μexp, respectively. To support the validity of the model, we also have confirmed the presence at low temperatures of negative magnetoresistance expected if impurity band conduction is predominant. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…In this work, the ratio decreases from 0.076 to 0.057 with increasing cooling rate, which means the decrease of the degree of order. The reported works also show a similar trend [4,[6][7][8]10]. Consequently, the lattice constants of a and c axes were evaluated to be 5.649 and 11.295 Å, respectively, using the XRD profiles of the crystal obtained by the slow cooling rate.…”

mentioning

confidence: 72%

Bulk crystal growth and characterization of ZnSnP₂ compound semiconductor by flux method

Nakatsuka

Nakamoto

Nosé

et al. 2015

Phys. Status Solidi C

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ZnSnP2 is a promising candidate for solar absorber materials from the viewpoint of high absorption and earth‐abundant constitution elements. In this paper, we fabricated ZnSnP2 crystals by flux method based on the phase diagram of Sn‐ZnP2 pseudo‐binary system and investigated their properties for an application to photovoltaics. The crystal growth experiments with the cooling rate of 0.7 and 12 °C/h were carried out and we successfully obtained ZnSnP2 crystals with the diameter of 8mm and the thickness of a few mm by a slow cooling rate. The structure of grown crystals studied by X‐ray diffraction was indicated to be chalcopyrite‐type ZnSnP2. In addition, the decrease of the degree of order was observed with the increase of cooling rate. The lattice constants of a and c axes are 5.649 and 11.295 Å, respectively. The composition of grown crystals is a near stoichiometric ratio of ZnSnP2 by EDX analysis. The bandgaps of ZnSnP2 crystals obtained by cooling rate of 0.7 and 12 °C/h were estimated to be 1.61 and 1.48 eV, respectively, which is caused by the difference of the degree of order. The hall‐resistivity measurement showed that ZnSnP2 crystals with a slow cooling rate has a p‐type conduction. The resistivity, the hole concentration and the mobility are 10∼70 Ωcm, 6·1016∼2·1017 cm‐3, and 1∼3 cm2V‐1s‐1. The obtained properties are suitable for an absorber of photovoltaics. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Chapter 7 Phenomena in Solid Solutions

Cited by 17 publications

References 37 publications

The Structure and Properties of the Semiconducting Compound ZnSnP₂

The Structure and Properties of the Semiconducting Compound ZnSnP₂

Impurity band conduction and negative magnetoresistance in p‐ZnSnAs₂ thin films

Bulk crystal growth and characterization of ZnSnP₂ compound semiconductor by flux method

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Chapter 7 Phenomena in Solid Solutions

Cited by 17 publications

References 37 publications

The Structure and Properties of the Semiconducting Compound ZnSnP2

The Structure and Properties of the Semiconducting Compound ZnSnP2

Impurity band conduction and negative magnetoresistance in p‐ZnSnAs2 thin films

Bulk crystal growth and characterization of ZnSnP2 compound semiconductor by flux method

Contact Info

Product

Resources

About

The Structure and Properties of the Semiconducting Compound ZnSnP₂

The Structure and Properties of the Semiconducting Compound ZnSnP₂

Impurity band conduction and negative magnetoresistance in p‐ZnSnAs₂ thin films

Bulk crystal growth and characterization of ZnSnP₂ compound semiconductor by flux method