Chapter 6 Epitaxial growth modeling

Masi, Maurizio; Kommu, Srikanth

doi:10.1016/s0080-8784(01)80184-8

Cited by 12 publications

(10 citation statements)

References 61 publications

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“…The fluid dynamics of these reactors was well investigated so far [5,6] and substantially laminar fully developed flow in the deposition region is ____________________ evidenced. Thus, because our aim was the development of the detailed chemical mechanism involved in the growth, a simple 1D model based on the boundary layer approximation to describe the fluxes toward the deposition surface was adopted here [7,8]. It includes the materials balances for any involved species and for the whole system and the energy balance for the gas stream and due to its simplicity, it allows a fast investigation of all the kinetic aspects also when adopting complex kinetic schemes.…”

Section: Reactor Modelingmentioning

confidence: 99%

Silicon carbide growth mechanisms from SiH₄, SiHCl₃ and nC₃H₈

Veneroni

Omarini

Masi³

2005

Cryst. Res. Technol.

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A detailed chemical mechanism for the silicon carbide epitaxial growth using chlorinated precursors is presented here. The mechanism involves 155 gas phase and 66 surface reactions among 47 gas phase and 9 surface species, respectively. A comparison with the performances of the standard process using silane is presented and the observed growth rate increase and the disappearing of the homogeneous silicon droplets in gas phase is explained.

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Section: Reactor Modelingmentioning

confidence: 99%

Silicon carbide growth mechanisms from SiH₄, SiHCl₃ and nC₃H₈

Veneroni

Omarini

Masi³

2005

Cryst. Res. Technol.

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“…Results of these simulations are reported in Table IV Finally, to test whether the global kinetic scheme was able to explain the formation of telomeres of SiCl 2 , the whole mechanism, consisting in adding the previous described reactions to the low molecular weight chemistry studied so far, was embedded ECS Transactions, 25 (8) 33-40 (2009) in a 1D reactor model based on boundary layer theory (5,12) to simulate its behavior during realistic deposition conditions. This simplified reactor model provides fast simulations with a reasonable accuracy for the considered purpose.…”

Section: Resultsmentioning

confidence: 99%

A Density Functional Theory Study of Chlorosilanes Polymerization in Silicon Epitaxy

Moscatelli¹,

Dossi²,

Fiorucci³

et al. 2009

ECS Trans.

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The decomposition kinetics of chlorosilanes have been so far investigated up to the lower molecular weight fragments, not regarding the generation of telomeres. In this work Quantum Chemistry was employed to investigate gas phase polymerization of chlorosilanes in operating conditions proper to silicon epitaxy. Thermodynamic and kinetic parameters, molecular structures and transition state geometries were determined with Density Functional Theory (DFT), resulting in a series of fast condensation-reactions bringing to the production of telomeres. In particular, a large number of linear, branched and cyclic silicon- compounds were analyzed (up to Si6Clx species). Finally the kinetic scheme was embedded in a reactor simulation code, where significant amounts of such species were obtained.

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“…In agreement with the results of previous simulations [2,3] the investigated domain of the reduced model was selected as sketched in figure 1a, considering only the reactor portion at constant section where the gas heating started. The model involves the mass conservation equations for any species involved in the deposition mechanism to describe the gas phase and the surface composition profiles and the energy conservation equation to describe the evolution of the gas temperature within the system and its detailed description can be found in [6,7]. However, due to the nature of the reactor here considered, the deposition was allowed on all the hot walls and not only on the susceptor.…”

Section: Reactor Modelingmentioning

confidence: 99%