Horizontal hot wall reactor design for epi‐SiC growth

Veneroni, Alessandro; Omarini, Fabrizio; Masi, Maurizio; Mauceri, Marco; Pistone, Giuseppe; Abbondanza, Giuseppe

doi:10.1002/crat.200410470

Cited by 6 publications

(5 citation statements)

References 7 publications

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“…Thus, very accurate results can be obtained by only including reactions between silicon containing species in the chemical models [1]. It has also been found that the two most common precursor combinations, SiH 4 + C 3 H 8 and SiH 4 + C 2 H 4 , give similar concentration profiles along the gas flow direction for simplified models [7]. Therefore very little effort has been made to investigate the reaction paths for hydrocarbons further.…”

Section: Introductionmentioning

confidence: 99%

Simulation of Gas-Phase Chemistry for Selected Carbon Precursors in Epitaxial Growth of SiC

Danielsson

Sukkaew

Yazdanfar

et al. 2013

MSF

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Abstract. Numerical simulations are one way to obtain a better and more detailed understanding of the chemical vapor deposition process of silicon carbide. Although several attempts have been made in this area during the past ten years, there is still no general model valid for any range of process parameters and choice of precursors, that can be used to control the growth process, and to optimize growth equipment design. In this paper a first step towards such a model is taken. Here, mainly the hydrocarbon chemistry is studied by a detailed gas-phase reaction model, and comparison is made between C 3 H 8 and CH 4 as carbon precursor. The results indicate that experimental differences, which previous models have been unable to predict, may be explained by the new model.

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Section: Introductionmentioning

confidence: 99%

Simulation of Gas-Phase Chemistry for Selected Carbon Precursors in Epitaxial Growth of SiC

Danielsson

Sukkaew

Yazdanfar

et al. 2013

MSF

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“…Several models have been proposed for the case of SiC epitaxial growth, − but only a few have been done on the chlorine-based CVD process. , Veneroni et al have set up the most complete study so far with predictions on the growth rate fitting well with experimental results. − Yet their study was limited to two sets or precursors (SiH 4 + C 2 H 4 + HCl or SiHCl 3 + C 2 H 4 ) and fixed growth conditions (such as temperature and Cl/Si ratio). Wang et al did some calculations of the gas- and solid-phase states for the SiCl 4 chemistry. − Nishizawa did gas-phase calculations to compare the standard chemistry (SiH 4 + C 3 H 8 ) with and without addition of HCl, or using SiHCl 3 as a silicon precursor .…”

Section: Introductionmentioning

confidence: 99%

Gas-Phase Modeling of Chlorine-Based Chemical Vapor Deposition of Silicon Carbide

Kordina

Henry

Nishizawa

et al. 2012

Crystal Growth & Design

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Kinetic calculations of the chemical phenomena occurring in the epitaxial growth of silicon carbide are performed in this study. The main process parameters analyzed are precursor types, growth temperature, Cl/Si ratio, and precursors' concentration. The analysis of the gas-phase reactions resulted in a model which could explain most of the already reported experimental results, performed in horizontal hot-wall reactors. The effect of using different carbon or silicon precursors is discussed, by comparing the gas-phase composition and the resulting C/Si ratio inside the hot reaction chamber. Chlorinated molecules with three chlorine atoms seem to be the most efficient and resulting in a uniform C/Si ratio along the susceptor coordinate. Further complexity in the process derives from the use of low temperatures, which affects not only the gas-phase composition but also the risk of gas-phase nucleation. The Cl/Si ratio is demonstrated to be crucial not only for the prevention of silicon clusters but also for the uniformity of the gas-phase composition.

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“…The subatmospheric pressure chemical vapour deposition (CVD) process has been used to fabricate theoretically dense, highly pure, and ceramic materials such as ZnS, ZnSe, CdS, CdZnTe, Si and SiC. In this paper [6], the simulation of the sihcon carbide deposition performed in a hot wall reactor type is presented. Further, the flow pattern in these CVD reactors is described and its importance in achieving good control over thickness and composition uniformity over large areas is discussed.…”

Section: Introductionmentioning

confidence: 99%