Chapter 1 Operational Characteristics of Infrared Photodetectors

Eisenman, W. L.; Merriam, J. D.; Potter, Roy F.

doi:10.1016/s0080-8784(08)60146-5

Cited by 8 publications

(3 citation statements)

References 17 publications

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“…For testing infrared detectors, blackbodies simulators of 500 K are commonly used. A perfect blackbody has a precisely defined characteristic of the spectral distribution of the radiation power [5].…”

Section: Radiation Powermentioning

confidence: 99%

Bulletin of the Polish Academy of Sciences: Technical Sciences

Bielecki

Achtenberg

Kopytko

et al. 2022

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The review includes results of analyses and research aimed at standardizing the concepts and measurement procedures associated with photodetector parameters. Photodetectors are key components that ensure the conversion of incoming optical radiation into an electrical signal in a wide variety of sophisticated optoelectronic systems and everyday devices, such as smartwatches and systems that measure the composition of the Martian atmosphere. Semiconductor detectors are presented, and they play a major role due to their excellent optical and electrical parameters as well as physical parameters, stability, and long mean time to failure. As their performance depends on the manufacturing technology and internal architecture, different types of photodetectors are described first. The following parts of the article concern metrological aspects related to their characterization. All the basic parameters have been defined, which are useful both for their users and their developers. This allows for the verification of photodetectors' workmanship quality, the capabilities of a given technology, and, above all, suitability for a specific application and the performance of the final optoelectronic system. Experimentally validated meteorological models and equivalent diagrams, which are necessary for the correct analysis of parameter measurements, are also presented. The current state of knowledge presented in recognized scientific papers and the results of the authors' works are described as well.

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Section: Radiation Powermentioning

confidence: 99%

Bulletin of the Polish Academy of Sciences: Technical Sciences

Bielecki

Achtenberg

Kopytko

et al. 2022

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“…A further discussion of detector issues can be found elsewhere. 3,25,26 In the remaining sections of this work, I will concentrate on the stress-induced changes in the responsivity as this figure of merit best elucidates the intimate relationship between materials properties and detector performance.…”

Section: Photoconductive Detectors: Figures Of Meritmentioning

confidence: 99%

Electronic processes in uniaxially stressed p-type germanium

Dubon, Jr.

1996

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“…The three major scattering mechanisms that affect the mobility of carriers in a non-degenerately doped semiconductor are 1) phonon or lattice scattering, 2) ionized impurity scattering, and 3) neutral impurity scattering. The dominance of each mechanism depends on the temperature.…”

mentioning

confidence: 99%

Uniaxially stressed Ge:Ga and Ge:Be

Dubon

1992

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Chapter 1 Operational Characteristics of Infrared Photodetectors

Cited by 8 publications

References 17 publications

Bulletin of the Polish Academy of Sciences: Technical Sciences

Bulletin of the Polish Academy of Sciences: Technical Sciences

Electronic processes in uniaxially stressed p-type germanium

Uniaxially stressed Ge:Ga and Ge:Be

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