Electronic processes in uniaxially stressed p-type germanium

Dubon, Jr., Oscar Danilo

doi:10.2172/212680

Cited by 1 publication

(1 citation statement)

References 16 publications

(22 reference statements)

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“…where ε is the dielectric constant of Ge which is equal to 16, m * is the hydrogenic effective mass [34]. The value of m * /m is taken to be 0.21 in the case of holes in p-type Ge.…”

Section: Absorption Cross Sectionmentioning

confidence: 99%

Low-energy solar neutrino detection utilizing advanced germanium detectors

Bhattarai

Mei

Raut

2023

J. Phys. G: Nucl. Part. Phys.

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We explore the possibility to use advanced germanium (Ge) detectors as a low-energy solar neutrino observatory by means of neutrino-nucleus elastic scattering. A Ge detector utilizing internal charge amplification for the charge carriers created by the ionization of impurities is a novel technology with experimental sensitivity for detecting low-energy solar neutrinos. Ge internal charge amplification (GeICA) will amplify the charge carriers induced by neutrino interacting with Ge atoms through the emission of phonons. It is those phonons that will create charge carriers through the ionization of impurities to achieve an extremely low energy threshold of $\sim$0.01 eV. We demonstrate the phonon absorption, excitation, and ionization probability of impurities in a Ge detector with impurity levels of 3$\times$10$^{10}$ cm$^{-3}$, 9$\times$10$^{10}$ cm$^{-3}$, and 2$\times$10$^{11}$ cm$^{-3}$. We present the sensitivity of such a Ge experiment for detecting solar neutrinos in the low-energy region. We show that, if GeICA technology becomes available, then a new opportunity arises to observe $pp$ and $^{7}$Be solar neutrinos. Such a novel detector with only 1 kg of high-purity Ge will give $\sim$ 10 events per year for $pp$ neutrinos and $\sim$ 5 events per year for $^{7}$Be neutrinos with a detection energy threshold of 0.01 eV.

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“…where ε is the dielectric constant of Ge which is equal to 16, m * is the hydrogenic effective mass [34]. The value of m * /m is taken to be 0.21 in the case of holes in p-type Ge.…”

Section: Absorption Cross Sectionmentioning

confidence: 99%