Channelling effects for 15 GeV/c negative pions

Esbensen, H.; Fich, O.; Golovchenko, Jene Andrew; Madsen, S.; Nielsen, H.L.; Schiøtt, H. E.; Uggerhøj, E.; Vraast-Thomsen, C.; Charpak, G.; Majewski, S.; Odyniec, G.; Petersen, G.; Sauli, F.; Ponpon, J.P.; Siffert, P.

doi:10.1016/0370-2693(78)90151-x

Cited by 12 publications

(2 citation statements)

References 3 publications

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“…[3,4] Experimentally, stopping ranges and straggling ranges have been measured in silicon and germanium. [5,6] GaN is currently becoming the most important semiconductor after silicon. AlGaInN alloys are nowadays widely used in light emitting diodes (LEDs) for lighting and displays, for lasers in the Blu-ray technology, and start to emerge for electronic applications in the radio frequency and power domains.…”

Section: Introductionmentioning

confidence: 99%

Proton Energy Loss in GaN

Duboz

Zucchi

Frayssinet

et al. 2021

Physica Status Solidi (b)

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The proton energy loss in GaN in an energy range between 0 and 65 MeV is investigated. The energy of protons generated by a cyclotron at about 65 MeV is varied by inserting an energy‐absorbing medium of varying thickness. The precise modeling of the GaN Schottky diode response as a function of the absorbing medium thickness allows us to demonstrate that the energy absorption loss in GaN precisely follows the Bethe theory. In addition, the region of the detector contributing to its response to a proton beam, which is of prime importance for proton detector optimization, can be identified.

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Section: Introductionmentioning

confidence: 99%

Proton Energy Loss in GaN

Duboz

Zucchi

Frayssinet

et al. 2021

Physica Status Solidi (b)

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show abstract

“…However, for minimum ionizing particles it is probably less than one micron. The number of electron-hole pairs formed along the track of a minimum ionizing particle is about 80 per micron [10]. As electrons and holes drift towards the positlve and negative electrode, respecti~ely, they diffuse outwards, thus increasin.g the diameter of the Charge Sheath by ( 1) where 0 is the diffusion coefficient for electrons or holes and t is the respective drift time.…”

Section: Introductionmentioning

confidence: 99%