Channeling and radiation of 855 MeV electrons and positrons in straight and bent tungsten (1 1 0) crystals

Shen, Hua; Zhao, Qiang; Zhang, F.S.; Sushko, Gennady B.; Korol, Andrey V.; Solov’yov, Andrey V.

doi:10.1016/j.nimb.2018.03.025

Cited by 18 publications

(20 citation statements)

References 72 publications

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“…A number of simulations have been performed for electrons and positrons of the sub-GeV and GeV energies channeling in straight, bent and periodically bent silicon, diamond and tungsten crystals [40,[48][49][50][51][52][53][54][55] including comparison and benchmarking against experimental data [39,[55][56][57][58].…”

Section: (A) (B)mentioning

confidence: 99%

MBN explorer atomistic simulations of 855 MeV electron propagation and radiation emission in oriented silicon bent crystal: theory versus experiment

et al. 2021

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The method of relativistic molecular dynamics is applied for accurate computational modeling and numerical analysis of the channelling phenomena for 855 MeV electrons in bent oriented silicon (111) crystal. Special attention is devoted to the transition from the axial channelling regime to the planar one in the course of the crystal rotation with respect to the incident beam. Distribution in the deflection angle of electrons and spectral distribution of the radiation emitted are analyzed in detail. The results of calculations are compared with the experimental data collected at the MAinzer MIctrotron facility.

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Section: (A) (B)mentioning

confidence: 99%

MBN explorer atomistic simulations of 855 MeV electron propagation and radiation emission in oriented silicon bent crystal: theory versus experiment

et al. 2021

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“…Verification of the channeling module of MBN Explorer against experimental data as well as predictions of other theoretical models has been carried out in a large number of publications [24,33,42,[49][50][51][52][53], where channeling of electrons and positions in straight, bent and periodically bent crystals was studied, and the radiation spectra were calculated and successfully compared to experimental data.…”

Section: Dynamic Simulation Boxmentioning

confidence: 99%

Advances in multiscale modeling for novel and emerging technologies

Verkhovtsev

Solov’yov

2021

Eur. Phys. J. D

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Computational multiscale modeling encompasses a wide range of end-products and a great number of technological applications. This paper provides an overview of the computational multiscale modeling approach based on utilization of MBN Explorer and MBN Studio software packages, the universal and powerful tools for computational modeling in different areas of challenging research arising in connection with the development of novel and emerging technologies. Three illustrative case studies of multiscale modeling are reviewed in relation to: (i) the development of novel sources of monochromatic high-energy radiation based on the crystalline undulators, (ii) controlled fabrication of nanostructures using the focused electron-beam induced deposition, and (iii) ion-beam cancer therapy. These examples illustrate the key algorithms and unique methodologies implemented in the software. Graphic abstract draftps

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Section: B Dynamic Simulation Boxmentioning

confidence: 99%

Advances in multiscale modeling for novel and emerging technologies

Verkhovtsev,

Solov'yov,

Solov'yov

2021

Preprint

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Computational multiscale modeling encompasses a wide range of end-products and a great number of technological applications. This paper provides an overview of the computational multiscale modeling approach based on utilization of MBN Explorer and MBN Studio software packages, the universal and powerful tools for computational modeling in different areas of challenging research arising in connection with the development of novel and emerging technologies. Three illustrative case studies of multiscale modeling are reviewed in relation to (i) the development of novel sources of monochromatic high-energy radiation based on the crystalline undulators, (ii) controlled fabrication of nanostructures using the focused electron-beam induced deposition, and (iii) ion-beam cancer therapy. These examples illustrate the key algorithms and unique methodologies implemented in the software.

show abstract

Channeling and radiation of 855 MeV electrons and positrons in straight and bent tungsten (1 1 0) crystals

Cited by 18 publications

References 72 publications

MBN explorer atomistic simulations of 855 MeV electron propagation and radiation emission in oriented silicon bent crystal: theory versus experiment

MBN explorer atomistic simulations of 855 MeV electron propagation and radiation emission in oriented silicon bent crystal: theory versus experiment

Advances in multiscale modeling for novel and emerging technologies

Advances in multiscale modeling for novel and emerging technologies

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Channeling and radiation of 855 MeV electrons and positrons in straight and bent tungsten (1 1 0) crystals

Cited by 18 publications

References 72 publications

MBN explorer atomistic simulations of 855 MeV electron propagation and radiation emission in oriented silicon bent crystal: theory versus experiment

MBN explorer atomistic simulations of 855 MeV electron propagation and radiation emission in oriented silicon bent crystal: theory versus experiment

Advances in multiscale modeling for novel and emerging technologies

Advances in multiscale modeling for novel and emerging technologies

Contact Info

Product

Resources

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Channeling and radiation of 855 MeV electrons and positrons in straight and bent tungsten (1 1 0) crystals