Channel mobility and contact resistance in scaled ZnO thin-film transistors

Abstract

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P‐1.15: Improving the Performance of IZO Transistor by Adding Buffer Layer

“…The devices exhibited lower contact resistance and improved performance (VTH: 1.5 V, μ FE: 11.5cm 2 /Vs, SS: 0.2 V/dec, ION/IOFF:2.4×10 10 , and RCW: 18Ωcm), presenting that ITO is an excellent diffusion barrier for Cu metallization in TFT backplanes [3]. Furthermore, researches also demonstrate that a well-known challenge for metal-oxide TFTs is obtaining a reliable source-drain contact method, which minimises contact resistance and maximises on/off-current ratio, particularly as gate length is scaled [4,5].…”

Reduction of solution-processed copper-oxide-based transistors’ contact resistance using aluminium electrodes

“…13) The injection barrier represented by the contact resistance is a serious issue in oxide-based semiconductors. Surprisingly, contact resistance has not yet been investigated for CuO-based devices, although it has been investigated for ZnO-based devices, [14][15][16][17] and contact resistance reduction has led to significant device improvement. 18,19) The present work is focused on metal-oxide transistors with CuO as a semiconductor and two different metals as source/drain contacts.…”

Hydrothermal Synthesis of Zinc Oxide Nanoparticles Using Different Chemical Reaction Stimulation Methods and Their Influence on Process Kinetics

“…Zinc oxide nanoparticles are used as a catalyst in organic synthesis. In the electronics industry, ZnONPs are used to produce semiconductors [ 1 , 2 , 3 , 4 , 5 ], varistors [ 6 , 7 , 8 , 9 , 10 , 11 , 12 ], sensors [ 13 , 14 , 15 , 16 , 17 , 18 ] and transistors [ 19 , 20 , 21 , 22 , 23 , 24 ]. Due to the wide energy gap, 3.37 eV zinc oxide is used as a luminescent material in optoelectronics [ 25 , 26 , 27 , 28 , 29 , 30 ].…”