Channel length independent subthreshold characteristics in submicron MOSFETs

Shin, Hyungsoon; Lee, C.; Hwang, Sung Woo; Park, B.G.; Park, Y.J.; Min, Hong‐Shick

doi:10.1109/55.663539

Cited by 17 publications

(11 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Because we used block-shaped profiles in the simulations, from which the results are in agreement with the measurements, we may say that the exact shape of the doping profile is not important rather the integral P CH , as described in (9). This could drastically simplify the (analytical) calculations with (7a) and (9).…”

Section: Resultsmentioning

confidence: 95%

“…We can use (7a), (9), and (12) for qualitatively understanding the experimental and simulation data discussed in Section III.…”

Section: Basic Theorymentioning

confidence: 99%

“…In [9], it was stated that the surface-potential variation in the channel of pocket-implanted devices is important, which partly explains the physics behind the subthreshold current.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Analysis of the subthreshold current of pocket or halo-implanted nMOSFETs

Hueting

Heringa

2006

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

In this work, we analyzed the subthreshold current (I D) of pocket implanted MOSFETs using extensive device simulations and experimental data. We present an analytical model for the subthreshold current applicable for any type of FET and show that the subthreshold current of nMOSFETs, which is mainly due to diffusion, is determined by the internal two-dimensional hole distribution across the device. This hole distribution is affected by the electric potential of the gate and the doping concentration in the channel. The results obtained allow accurate modelling of the subthreshold current of future generation MOS devices.

show abstract

Section: Resultsmentioning

confidence: 95%

“…We can use (7a), (9), and (12) for qualitatively understanding the experimental and simulation data discussed in Section III.…”

Section: Basic Theorymentioning

confidence: 99%

See 1 more Smart Citation

Analysis of the subthreshold current of pocket or halo-implanted nMOSFETs

Hueting

Heringa

2006

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

show abstract

“…ION 'OFF ratio is found to be higher in case of LACLATI MOSFET as shown in Fig.5. In the LACLATI MOSFETs, that exhibits channel length independent sub-threshold characteristics which will be discussed elsewhere, it is expected that ION 'OFF ratio will increase as Leff decreases [2]. MOSFETs with channellength independent sub-threshold characteristics will have better device performance without increasing standby current.…”

Section: C)mentioning

confidence: 99%

The Effects of Varying Tilt Angle of Halo Implant on the Performance of Sub 100nm LAC MOSFETs

Sarkar

Mallik

Sarkar

et al. 2006

First International Conference on Industrial and Information Systems

View full text Add to dashboard Cite

“…The implant can be either symmetrical or asymmetrical with respect to source or drain. It was reported that the threshold voltage roll-off and subthreshold leakage current can be reduced by such implants next to the source /drain (S/D) junction [1][2]. Reduction of short channel effects has also been reported through Large Angle Tilt Implant in asymmetric halo structures [3].…”

Section: Introductionmentioning

confidence: 99%