Challenges in Development of Sub-10 nm Resist Materials

Kozawa, Takahiro; Santillan, Julius Joseph; Itani, Toshiro

doi:10.2494/photopolymer.29.717

Cited by 2 publications

(2 citation statements)

References 43 publications

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“…4,5) The dependence of LER on the half-pitch of line-and-space patterns has been theoretically investigated on the basis of the reaction mechanisms of chemically amplified resists with the parameters of the latest high-performance chemically amplified resists. [6][7][8][9] It was suggested that LER rapidly increases with the reduction in half-pitch in the sub-10 nm resolution region unless the sensitivity is decreased (the exposure dose is increased). Besides LER, the etch resistance of resist films is a serious problem because the resist film thickness should be decreased with the increase in resolution to avoid the resist pattern collapse.…”

Section: Introductionmentioning

confidence: 99%

Electron–hole pairs generated in ZrO₂nanoparticle resist upon exposure to extreme ultraviolet radiation

Kozawa

Santillan

Itani

2018

Jpn. J. Appl. Phys.

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Metal oxide nanoparticle resists have attracted much attention as the next-generation resist used for the high-volume production of semiconductor devices. However, the sensitization mechanism of the metal oxide nanoparticle resists is unknown. Understanding the sensitization mechanism is important for the efficient development of resist materials. In this study, the energy deposition in a zirconium oxide (ZrO 2 ) nanoparticle resist was investigated. The numbers of electron-hole pairs generated in a ZrO 2 core and an methacrylic acid (MAA) ligand shell upon exposure to 1 mJ cm %2 (exposure dose) extreme ultraviolet (EUV) radiations were theoretically estimated to be 0.16 at most and 0.04-0.17 cm 2 mJ %1 , respectively. By comparing the calculated distribution of electron-hole pairs with the line-and-space patterns of the ZrO 2 nanoparticle resist fabricated by an EUV exposure tool, the number of electron-hole pairs required for the solubility change of the resist films was estimated to be 1.3-2.2 per NP. NP denotes a nanoparticle consisting of a metal oxide core with a ligand shell. In the material design of metal oxide nanoparticle resists, it is important to efficiently use the electron-hole pairs generated in the metal oxide core for the chemical change of ligand molecules.

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Section: Introductionmentioning

confidence: 99%

Electron–hole pairs generated in ZrO₂nanoparticle resist upon exposure to extreme ultraviolet radiation

Kozawa

Santillan

Itani

2018

Jpn. J. Appl. Phys.

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“…Part of them is aimed at optimization of EUV resist composition and processing conditions during the lithography step. In this group of methods such factors as molecular size, protection ratio, PAG diffusion length and concentration are considered for optimization of the photoresist performance [2][3][4][5]. Other techniques for line-edge roughness mitigation rely on the smoothening effect of plasma treatment and ion bombardment [6][7][8][9].…”

Section: Introductionmentioning

confidence: 99%

Sequential Infiltration Synthesis for Line Edge Roughness Mitigation of EUV Resist

Baryshnikova

Simone²,

Knaepen³

et al. 2017

J. Photopol. Sci. Technol.

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It is well known that high line-edge roughness (LER) and line-width roughness (LWR) are one of the key problems hindering utilization of extreme ultraviolet lithography (EUVL) in fabrication of semiconductor devices at advanced technology nodes where pattern with sub-20 nm half pitch lines and spaces is required. Sequential infiltration synthesis (SIS) has never been used before in lithography for line-edge roughness mitigation, but this concept has proved its value for 14 nm half pitch block copolymer lines formed by directed self-assembly. During this process an inorganic scaffold is being deposited inside the resist material after performing several sequential infiltration cycles with metal-organic precursor and its oxidizing agent. Etching in oxygen atmosphere after is required to transform former resist pattern into metal oxide one and improve (up to 40%) the pattern roughness. In this paper, for the first time we demonstrate feasibility of sequential infiltration synthesis (SIS) for smoothing of EUV resist lines.

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Challenges in Development of Sub-10 nm Resist Materials

Cited by 2 publications

References 43 publications

Electron–hole pairs generated in ZrO₂nanoparticle resist upon exposure to extreme ultraviolet radiation

Electron–hole pairs generated in ZrO₂nanoparticle resist upon exposure to extreme ultraviolet radiation

Sequential Infiltration Synthesis for Line Edge Roughness Mitigation of EUV Resist

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Challenges in Development of Sub-10 nm Resist Materials

Cited by 2 publications

References 43 publications

Electron–hole pairs generated in ZrO2nanoparticle resist upon exposure to extreme ultraviolet radiation

Electron–hole pairs generated in ZrO2nanoparticle resist upon exposure to extreme ultraviolet radiation

Sequential Infiltration Synthesis for Line Edge Roughness Mitigation of EUV Resist

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Product

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Electron–hole pairs generated in ZrO₂nanoparticle resist upon exposure to extreme ultraviolet radiation

Electron–hole pairs generated in ZrO₂nanoparticle resist upon exposure to extreme ultraviolet radiation