“…The EADS in-house technology in-use has been demonstrated to be capable of hot-switching up to 10 W of RF power without performance degradation [6]. While the commercial device features lower overall insertion loss and higher return loss, the self-designed SPDT provides higher isolation.…”
Section: D) Comparisonmentioning
confidence: 99%
“…Figure 1 depicts a frequency-agile multi-mode PA with RF-MEMS-based M 3 Ns, for which the EADS in-house silicon-based RF-MEMS technology [5] is used. EADS in-house switches have already been demonstrated to provide hot-switching at a power level of 10 W [6].…”
This work presents radio-frequency-microelectromechanical-system (RF-MEMS)-based tunable matching networks for a multi-band gallium nitride (GaN) power amplifer (PA) application. In the frequency range from 3.5-8.5GHz return losses of 5-10dB were measured for the input network, matching impedances close to the border of the Smith chart. For the output matching network return losses of 10-20dB and insertion losses of 1.3-2dB were measured. The matching networks can tune the PA to four different operating frequencies, as well as changing the transistor's mode of operation from maximum delivered-output-power to maximum power-added-efficiency (PAE), while keeping the operating frequency constant. Furthermore, different single pole double throw (SPDT)-switches are designed and characterized, to be used in frequency-agile transmit/receive-modules (T/R modules)
“…The EADS in-house technology in-use has been demonstrated to be capable of hot-switching up to 10 W of RF power without performance degradation [6]. While the commercial device features lower overall insertion loss and higher return loss, the self-designed SPDT provides higher isolation.…”
Section: D) Comparisonmentioning
confidence: 99%
“…Figure 1 depicts a frequency-agile multi-mode PA with RF-MEMS-based M 3 Ns, for which the EADS in-house silicon-based RF-MEMS technology [5] is used. EADS in-house switches have already been demonstrated to provide hot-switching at a power level of 10 W [6].…”
This work presents radio-frequency-microelectromechanical-system (RF-MEMS)-based tunable matching networks for a multi-band gallium nitride (GaN) power amplifer (PA) application. In the frequency range from 3.5-8.5GHz return losses of 5-10dB were measured for the input network, matching impedances close to the border of the Smith chart. For the output matching network return losses of 10-20dB and insertion losses of 1.3-2dB were measured. The matching networks can tune the PA to four different operating frequencies, as well as changing the transistor's mode of operation from maximum delivered-output-power to maximum power-added-efficiency (PAE), while keeping the operating frequency constant. Furthermore, different single pole double throw (SPDT)-switches are designed and characterized, to be used in frequency-agile transmit/receive-modules (T/R modules)
“…The mean values of each power measurement is in excellent agreement with the reference measurements of the VNA (solid lines marked with symbols), showing no power dependency under cold-switching conditions. In case of need for hot-switching capabilities, capacitive RF-MEMS [14] can be used. Fig.…”
Section: Measurements and Characterizationmentioning
This work presents radio-frequency-microelectromechanical-system (RF-MEMS)-based tunable input- and output-matching networks for a multi-band gallium nitride (GaN) power-amplifier applications. In the first part, circuit designs are shown and characterized for a fixed operation mode of the transistor, i.e. either a maximum-output-power- or a maximum-power-added-efficiency (PAE)-mode, which are finally combined into a multi-mode-matching network (M 3 N); the M 3 N allows to tune the operation mode of the transistor independently of its operational frequency. The matching networks are designed to provide optimum matching for the power amplifier at three to six different operating frequencies for maximum-output-power- and maximum-PAE-mode. In the frequency range from 3.5 to 8.5 GHz, return losses of 10 dB and higher were measured and insertion losses of 0.5-1.9 dB were demonstrated for the output-matching networks. Further characterizations were performed to test the dependency on the RF-input power, and no changes were observed up to power levels of 34 dBm when cold-switched
“…At each power level, the switch was actuated 100 000 times while the RF-signal was continuously applied (hot-switching conditions). The device did not fail even when the maximum of 9.8 W of the measurement setup was reached [16], which is the highest value reported to date. Further considerations on the RF-power handling capabilities can be found in [17].…”
Section: Reliability and Performance Figuresmentioning
This paper gives an overview of the low-complexity radio frequency microelectromechanical systems (RF MEMS) switch concept and technology of EADS Innovation Works in Germany. Starting in 2003, a capacitive switch concept, which is unique in several aspects, was developed to address specific needs in the aeronautic and space. Thermally grown silicon oxide as dielectric layer, the silicon substrate as actuation electrode, and a conductive zone realized by ion implantation make the EADS RF MEMS switch a very simple, low-cost, and reliable approach. In this document, data on experimental investigations are presented, which demonstrate outstanding performance figures in terms of insertion loss, isolation, frequency range, bandwidth, RF-power handling, and robustness with respect to thermal load. Based on this concept, numerous different circuits in particular single-pole single-throws (SPSTs), single-pole multi-throws (SPMTs), tunable filters, phase shifters, and electronically steerable antennas between 6 and 100 GHz have been designed, fabricated, and characterized.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
