Chalcogens in germanium

Abstract

The chalcogens S, Se, and Te have been introduced by diffusion into single-crystal germanium. .Both thermaland optical-junction space-charge techniques have been performed in parallel with photoconductivity studies using a Fourier-transform spectrometer. Electronic levels within the energy gap have been monitored from both valence and conduction bands using various techniques.The suggested double-donor states are found to be at Ec -0.28 and Ec -0.59 eV for sulfur, Ec -0.268 and E& -0.512 eV for selenium, and E& -0.093 and Ec -0.33 eV for tellurium. Evidence is found for excited states of S, Se, and Te. The neutral center of Se exhibits line spectra and corresponding Fano resonances due to a I 0 intravalley phonon. The binding energy of the neutral 2s ( A &) state of 7.4 meV is reported. A fitting of the spectra of deeper Se levels is in agreement with a singly ionized center. Electron thermal-emission rates and capture cross sections are reported for the Ec -0.268, Ec -0.28, and E& -0.33 levels. The capture cross section of the latter shows a T " temperature dependence. Furthermore, an unidentified double donor exhibiting excited states is found in several samples, having a binding energy of 207 meV. It is suggested to be oxygen related. Finally a comparison is made with data obtained from chalcogen-doped silicon.

Advanced far infrared detector and double donor studies in Ge

“…His group performed a very comprehensive study by using optical absorption spectroscopy and DLTS techniques. eV and Ec-0.30eV, respectively (Grimmeiss, et al 1988 …”

Magneto-optical far-infrared absorption spectroscopy of the hole states of indium phosphide

“…Here we restrict the discussion to the bound states of impurities. Fano resonances have been reported for shallow and deep donor and acceptor impurities in Si, [14][15][16][17][18][19][20][21][22][23][24] donors 25 and acceptors 26 in Ge, Mn in GaAs, 27 and Li in ZnSe. 28 The Fano function F͑ , q͒ = ͑q + ͒ 2 / ͑1+ 2 ͒ involves the shape parameter q and the dimensionless reduced energy…”

Electrical properties of Ge crystals and effective Schottky barrier height of NiGe/Ge junctions modified by P and chalcogen (S, Se, or Te) co-doping

“…where 14 ]. Note that for double donors, the maximum activation ratio n/N D under our definition is 2.…”