2017
DOI: 10.3390/cryst7120367
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Chalcogenide Quaternary Cu2FeSnS4 Nanocrystals for Solar Cells: Explosive Character of Mechanochemical Synthesis and Environmental Challenge

Abstract: Abstract:In this study we demonstrate the synthesis of quaternary semiconductor nanocrystals of stannite Cu 2 FeSnS 4 /rhodostannite Cu 2 FeSn 3 S 8 (CFTS) via mechanochemical route using Cu, Fe, Sn and S elements as precursors in one-pot experiments. Methods of X-ray diffraction (XRD), nitrogen adsorption, high-resolution transmission electron microscopy (HRTEM), scanning transmission electron microscopy (STEM), energy-dispersive X-ray spectroscopy (EDX) and X-ray photoelectron spectroscopy (XPS) were applied… Show more

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Cited by 19 publications
(9 citation statements)
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“…Finally, the carbon peaks are positioned at 283.66 eV for C1s which could be the reason for the presence of rGO in the synthesized material, as displayed in Figure 4 f. The major states of the Cu, Fe, Sn, and S elements are +1, +2, +4, and −2, for Cu 2 FeSnS 4 chemical formula. 31 …”
Section: Results and Discussionmentioning
confidence: 99%
“…Finally, the carbon peaks are positioned at 283.66 eV for C1s which could be the reason for the presence of rGO in the synthesized material, as displayed in Figure 4 f. The major states of the Cu, Fe, Sn, and S elements are +1, +2, +4, and −2, for Cu 2 FeSnS 4 chemical formula. 31 …”
Section: Results and Discussionmentioning
confidence: 99%
“…CNiTS also exhibit 1.1 and 1.05 eV band gaps which emphasize the occurrence of monoclinic Cu2SnS3 in both samples[7,75]. CFeTS posess band gap of 1.2 eV which agrees with past study[243]. As for CCoTS, the band gap is estimated at 1.1 eV which is relatively smaller than the averge reported values around 1.4-1.6 eV[160,161,185].…”
supporting
confidence: 86%
“…Please do not adjust margins Please do not adjust margins are comparable with the previous findings. 60,62,66,87,[126][127][128][129] However, CSrTS sample also exhibit two smaller inflection points which can be attributed to the band gap of Cu2SnS3 secondary phase (~0.92-0.95 eV). 1,130 In Mg + CTS and Ni + CTS, these correspond to the ternary phases' band gap, orthorhombic Cu3SnS4 (1.57 eV) 130 and monoclinic Cu2SnS3 (1.10 and ~1.00 eV).…”
Section: Optoelectronic Properties Of Cxts Thin Filmsmentioning
confidence: 99%