CH 4 -based dry etching of high Q InP microdisks

Abstract

Articles you may be interested inDependence of selectivity on plasma conditions in selective etching in submicrometer pitch grating on InP surface by CH4/H2 reactive ion etching J. Appl. Phys. 109, 073516 (2011); 10.1063/1.3573536 High quality nitride based microdisks obtained via selective wet etching of AlInN sacrificial layers Appl. Phys. Lett. 92, 171102 (2008); 10.1063/1.2917452 Reactive-ion etching of high-Q and submicron-diameter Ga As ∕ Al As micropillar cavities J. Vac. Sci. Technol. B 23, 2499 (2005); 10.1116/1.2131084High-Q photonic crystal microcavities fabricated in a thin GaAs membrane CH 4 -based InP dry etching techniques have been investigated by using electron cyclotron resonance etching and reactive ion etching ͑RIE͒ methods to obtain microdisk and ring structures having smooth, vertical sidewalls, and specular etched surfaces. The RIE method is chosen for the device etch process owing to the higher perfection of the surfaces generated by this process. Excess CH 4 introduced in the InP RIE process was found to generate excessive polymers and resulted in sloped, rough sidewalls. A multistep RIE process involving a high-pressure ͑75 mTorr͒ condition, followed by a lower pressure ͑15 mTorr͒ etching to the completion of the structure was developed that leads to very smooth sidewalls. This process was successfully utilized in the fabrication of vertically coupled microdisk resonators.

Eight-Channel Microdisk CW Laser Arrays Vertically Coupled to Common Output Bus Waveguides

“…5(a). However, at the given current injection level, the lasers wavelengths for channels [6][7][8] are not achieved at the designed 1.6-nm channel spacing. The lasing modes for those channel can be corrected by red shifting the gain and the spontaneous emission spectra the QWs.…”

“…The wafer-bonded sample is polished and the remaining InP from the original substrate is completely removed by selective chemical wet etching solutions. Smooth microdisk mesas with vertical sidewalls are produced on the exposed surface by using -based chemistry in a reactive ion etching (RIE) discharge [8]. The disk radii ( ) vary from 10.6 to 10.95 m with 0.05-m difference on average to achieve 1.6-nm spectral spacing for eight channels.…”

An Eight-Channel Demultiplexing Switch Array Using Vertically Coupled Active Semiconductor Microdisk Resonators

“…Then, the wafer-bonded sample is polished and the remaining InP from the original substrate is completely removed by selective chemical wet etching solutions. Smooth microdisk mesas with vertical sidewalls are produced on the exposed surface by using CH -based chemistry in a reactive ion etching discharge [9]. A conventional contact aligner is used to define the microdisk patterns where four pairs of different disk radii are used to produce the eight resonators for our DEMUX.…”

Carrier-induced refractive index changes in InP-based circular microresonators for low-voltage high-speed modulation

“…The microresonator modulators in our study are fabricated with a combination of epitaxial growth and wafer bonding using a process that has been described in previous publications [1], [5], [8]. Some modifications have been introduced to maintain the small bias swing necessary to operate the modulator modified by the ion implantation process.…”

“…Hence, no significant change in the optical loss, which in turn affects the transmission properties (quality factors and contrast ratios) of the resonators, was observed. these devices including patterning the bus waveguides, wafer bonding, etching of the disk mesas, polyimide planarization, and metallization is described in an earlier letter [8]. An additional etching step chosen only to penetrate the top p-layer is included in our processing to define a center void in these devices.…”