2012
DOI: 10.6111/jkcgct.2012.22.3.115
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CFD analysis for effects of the crucible geometry on melt convection and growth behavior during sapphire single crystal growth by Kyropoulos process

Abstract: Sapphire single crystals have been highlighted for epitaxial gallium nitride films in high-power laser and light emitting diode (LED) industries. Among the many crystal growth methods, the Kyropoulos process is an excellent commercial method for growing larger, high-optical-quality sapphire crystals with fewer defects. Because the properties and growth behavior of sapphire crystals are influenced largely by the temperature distribution and convection of molten sapphire during the manufacturing process, accurat… Show more

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