Cesium and bromine doping into hexagonal boron nitride

Sakamoto, Mayumi; Speck, James S.; Dresselhaus, M. S.

doi:10.1557/jmr.1986.0685

Cited by 16 publications

(5 citation statements)

References 17 publications

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“…Our calculations show that the BN is highly doped (Figure b), with a carrier concentration of 2 × 10 14 cm –2 , even though the conduction band of planar BN is 2.0 eV above the Fermi level of the electrene. This electron transfer is even more surprising given that prior efforts to dope BN with alkali metals have not succeeded …”

Section: Results and Discussionmentioning

confidence: 99%

Bonding in 2D Donor–Acceptor Heterostructures

et al. 2019

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The ability to alter distances between atoms is among the most important tools in materials design. Despite this importance, controlling the interlayer distance in stacks of 2D materials remains a challenge. Here we show from firstprinciples that stacking electrenesa new class of electrondonating 2D materialswith other 2D materials provides this control. The resulting donor−acceptor heterostructures have interlayer distances 1 Å less than van der Waals layered materials but 1 Å more than covalent or ionic bonds. This yields a class of quasi-bonds that exhibit characteristics of both ordinary chemical bonds and van der Waals interactions. We show how quasi-bonds have tunable polarities and strengths and that these bonds can be understood by drawing on familiar concepts from molecular orbital theory. We also demonstrate several useful properties of 2D donor−acceptor heterostructures, including superlubricity, ultralow work functions, and greatly improved voltages for lithium-ion batteries

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Section: Results and Discussionmentioning

confidence: 99%

Bonding in 2D Donor–Acceptor Heterostructures

et al. 2019

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“…Intercalation and its related functions have been widely studied for graphite. In the case of h-BN, intercalation with alkali-metal atoms, [43][44][45] transition-metal atoms, 46 and molecules such as Br 2 ͑Ref. 44͒ and S 2 O 6 F 2 ͑Ref.…”

Section: Isolatedmentioning

confidence: 99%

Doping of hexagonal boron nitride via intercalation: A theoretical prediction

et al. 2010

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A doping strategy for hexagonal boron nitride ͑h-BN͒ is proposed through hybrid Hartree-Fock density functional calculations. Unlike their behavior in typical semiconductors, substitutional dopants generate deep and localized in-gap states in h-BN. In contrast, intercalated atoms with high and low electronegativities perturb the host valence and conduction bands weakly, resulting in shallow acceptor and donor states, respectively. The formation of defect complexes involving substitutional dopants suppresses the migration of the intercalated dopants, with the shallow acceptor or donor characteristics preserved. The strategy proposed here is also applicable to h-BN ultrathin layers and extendable to the doping of BN single sheets via adsorption.

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“…Freeman and Larkindale (4,5) reported that a pink product from the interaction of h-BN with FeCl was accompanied by a small expansion of the interlayer spacing, but Ohashi and Shinjo (6) made an extensive study of this system and concluded that the pink material was due to a surface hydrolysis product, FeOCl. Reductive intercalation of h-BN by alkali metals has also been claimed, (7) but not substantiated (8).…”

Section: Had Claimed a Variety Of Intercalation Compounds Involving mentioning

confidence: 99%

“…[8] Charge carriers with small e!ective mass behave as light, mobile particles, whereas heavy carriers with large e!ective mass have lower mobilities. In general, the charge carrier has a small e!ective mass in wide bands and a large e!ective mass in narrow bands.…”

Section: Conductivity Of (Bn)mentioning

confidence: 99%