Cell-Temperature Determination in InGaP&amp;#x2013;(In)GaAs&amp;#x2013;Ge Triple-Junction Solar Cells

Yang, Weichen; Lo, Chieh; Wei, Chin-Ying; Lour, Wen‐Shiung

doi:10.1109/led.2011.2163294

Cited by 19 publications

(9 citation statements)

References 15 publications

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“…12 High performance multi-junction concentration cells utilize AlGaInP compounds of various compositions but severely suffer performance loss and destruction under elevated operating temperature. 13,14 Therefore, active cooling precautions are being devised, which disallows their integration with solar thermal collectors. In contrast, GaInN/GaNbased solar junctions have shown a high and monotonic increase in power conversion efficiency up to 200 suns, the highest concentration applied, without any cooling provisions.…”

mentioning

confidence: 99%

High 400 °C operation temperature blue spectrum concentration solar junction in GaInN/GaN

Zhao

Detchprohm

Wetzel

2014

Applied Physics Letters

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Transparent wide gap junctions suitable as high temperature, high flux topping cells have been achieved in GaInN/GaN by metal-organic vapor phase epitaxy. In structures of 25 quantum wells (QWs) under AM1.5G illumination, an open circuit voltage of 2.1 V is achieved. Of the photons absorbed in the limited spectral range of <450 nm, 64.2% are converted to electrons collected at the contacts under zero bias. At a fill factor of 45%, they account for a power conversion efficiency of38.6%. Under concentration, the maximum output power density per sun increases from 0.49 mW/cm2 to 0.51 mW/cm2 at 40 suns and then falls 0.42 mW/cm2 at 150 suns. Under external heating, a maximum of 0.59 mW/cm2 is reached at 250 °C. Even at 400 °C, the device is fully operational and exceeds room temperature performance. A defect analysis suggests that significantly higher fill factors and extension into longer wavelength ranges are possible with further development. The results prove GaInN/GaN QW solar junctions a viable and rugged topping cell for concentrator photovoltaics with minimal cooling requirements. By capturing the short range spectrum, they reduce the thermal load to any conventional cells stacked behind.

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confidence: 99%

High 400 °C operation temperature blue spectrum concentration solar junction in GaInN/GaN

Zhao

Detchprohm

Wetzel

2014

Applied Physics Letters

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“…OWADAYS the pace of research is very coherent among researchers for predicting the solar photovoltaic (PV) module's output power under various conditions [1]. Solar irradiance is the most significant factor for characterizing the magnitude of power generated in the cell and cell temperatures are the second most significant factor [2][3]. These factors are dependent on a number of data such as cell temperature, partial shading effect, wind speed etc.…”

Section: Introductionmentioning

confidence: 99%

Correlation of solar power prediction considering the nominal operating cell temperature under partial shading effect

et al. 2019

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“…1 Furthermore, the In x Ga 1Àx P alloys feature one of the widest direct band gaps among the non-nitride III-V semiconductors, enabling applications in the optoelectronics industry 2 particularly as light-emitting diodes. Recently, In x Ga 1Àx P has also been investigated for possible use in solar cells [3][4][5][6] particularly in spatial and terrestrial applications due to increased efficiency and superior radiation resistance.…”

Section: Introductionmentioning

confidence: 99%

Ion-implantation-induced amorphization of InxGa1−xP alloys as functions of stoichiometry and temperature

Hussain

Wendler

Wesch

et al. 2016

Journal of Applied Physics

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Rutherford Backscattering Spectrometry/Channeling and Extended X-ray Absorption Fine Structure measurements have been combined to investigate the amorphization of In x Ga 1Àx P alloys at 15 and 300 K for selected stoichiometries representative of the entire stoichiometric range. The amorphization kinetics differs considerably for the two temperatures: at 15 K, the amorphization kinetics of In x Ga 1Àx P is intermediate between the two binary extremes while at 300 K, In x Ga 1Àx P is more easily amorphized than both InP and GaP. Direct impact and stimulated amorphization both contribute to the amorphization process at 15 K. Dynamic annealing via thermally induced Frenkel pair recombination reduces the influence of direct impact amorphization at 300 K such that the stimulated amorphization is dominant. At this temperature, stimulated amorphization in ternary In x Ga 1Àx P alloys is supported by the structural disorder inherent from the bimodal bond length distribution.

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Cell-Temperature Determination in InGaP–(In)GaAs–Ge Triple-Junction Solar Cells

Cited by 19 publications

References 15 publications

High 400 °C operation temperature blue spectrum concentration solar junction in GaInN/GaN

High 400 °C operation temperature blue spectrum concentration solar junction in GaInN/GaN

Correlation of solar power prediction considering the nominal operating cell temperature under partial shading effect

Ion-implantation-induced amorphization of InxGa1−xP alloys as functions of stoichiometry and temperature

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