CdTe/CdS solar cells on flexible substrates

Mathew, Xavier; Pantoja, Joel; Romeo, Alessandro; Tiwari, Ayodhya N.

doi:10.1016/j.solener.2004.06.020

Cited by 177 publications

(69 citation statements)

References 15 publications

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“…The II-VI binary semiconducting compounds, belonging to the cadmium chalcogenide family (CdS, CdSe, CdTe), are considered to be very important materials for photovoltaic applications [1][2][3]. CdSe is a promising photovoltaic material because of its high absorption coefficient and nearly optimum band gap energy for the efficient absorption of light and conversion into electrical power [4].…”

Section: Introductionmentioning

confidence: 99%

Structural, optical, and electrical properties of electron beam evaporated CdSe thin films

Ahamed¹,

Balu²,

Nagarethinam³

et al. 2010

Cryst. Res. Technol.

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CdSe films have been deposited on glass substrates at different substrate temperatures between room temperature and 300 °C. The films exhibited hexagonal structure with preferential orientation in the (002) direction. The crystallinity improved and the grain size increased with temperature. Band gap values are found decreasing from about 1.92 eV to 1.77 eV with increase of the substrate temperature. It is observed that the resistivity decreases continuously with temperature. Laser Raman studies show the presence of 2 LO and 3 LO peaks at 416 cm -1 and 625 cm -1 respectively.

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Section: Introductionmentioning

confidence: 99%

Structural, optical, and electrical properties of electron beam evaporated CdSe thin films

Ahamed¹,

Balu²,

Nagarethinam³

et al. 2010

Cryst. Res. Technol.

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“…The growth temperatures used were between 150 and 300 o C. Such a low growth temperature is one of the advantages of this growth technique since it makes possible the use of pre-processed substrates, a very important feature for some applications, [14] and the fabrication of hybrid devices using polymer substrates. [15] The growth time was controlled from 15 minutes up to 10 hours, corresponding to sample thicknesses from 0.05 µm to 15 µm, depending on source temperature. The film thickness has been measured using a stylus profiler (AMBIOS XP1).…”

Section: Methodsmentioning

confidence: 99%

Characterization of CdTe thin films grown on glass by hot wall epitaxy

Ferreira¹,

Leal²,

Faria³

et al. 2006

Braz. J. Phys.

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In this work we have investigated the properties of CdTe thin films grown on glass substrates by Hot Wall Epitaxy. Its most important feature is the growth at very low temperatures, which would allow the growth even on polymer substrates. Our samples were grown at temperatures between 150 and 250 o C at a growth rate between 0.2 and 2 µm/h. The CdTe films were characterized by x-ray diffraction, scanning electron microscopy and optical transmission. The x-ray teta-2teta scans revealed films with cubic structure and a very high degree of preferential orientation. In fact, for films thicker than 1 µm, no other reflections have been observed on the spectra besides the (111), (333) The production of CdTe thin films has been investigated for many years. The semiconductor properties of this material are suitable for application in solar cells and many other optoelectronic devices such as detectors for the infrared and x-rayThe most used techniques to obtain these films are organometalic chemical vapour deposition [5], closed spaced sublimation [6], physical vapour deposition [7], molecular beam epitaxy [8], electrodeposition [9] and sputtering [10]. All these techniques have advantages and disadvantages depending on the type of application intended for the film. Parameters such as range of deposition temperatures and growth rates obtained, type of substrates used and films produced (epitaxial or polycrystalline) must all be of concern.In this work we describe the production and characterization of CdTe thin films grown on glass substrates. The growth technique used was the Hot Wall Epitaxy (HWE) and the films were characterized by scanning electron micrographs, atomic force microscopy (AFM), x-ray diffraction and optical transmission in the visible and near infrared. I. EXPERIMENTALThe HWE growth system used is shown in Fig. 1. It consists of a two furnace system, for source and substrate, separated by a shutter. The deposition occurs at pressures between 10 −6 and 10 −7 Torr, obtained by a diffusion pump.High purity commercial CdTe (99.999%) was used as source material and the source temperature can be controlled from 400 to 590 o C. In this temperature range CdTe evaporates congruently with more than 98% of CdTe molecules in the vapor. The growth rates obtained were in the range between 0.01 and 10Å/s. In this work we have used growth rates between 0.5 and 5.5Å/s.The HWE is a well established technique able to produce † Laboratório Associado de Sensores e Materiais, Instituto Nacional de Pesquisas Espaciais, Caixa Postal 515, 12245-970 São José dos Campos-SP, Brazil Received on , 2003In this work we have investigated the properties of CdTe thin films grown on glass substrates by Hot Wall Epitaxy. Its most important feature is the growth at very low temperatures, which would allow the growth even on polymer substrates. Our samples were grown at temperatures between 150 and 250 o C at a growth rate between 0.2 and 2 m/h. The CdTe films were characterized by xray diffraction, scanning electron microscopy and optical t...

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“…As a semiconductor, cadmium selenide has ntype conductivity with a band gap of 1.74 eV 19 . The photosensitivity of cadmium selenide is responsible for its application in the production of optoelectronic devices such as photo electrochemical (PEC) cells 20,21 , photoconductors, thin film transistors and gamma ray detectors etc 22,23 . Cadmium phosphide is an n-type semiconductor with a band gap of ~ 1.2 eV 24 which can be used in optoelectronics 25 , quantum electronics 26 and shows promise for thermo photovoltaic devices 27 .…”

Section: Pr2p(e)np(e')mentioning

confidence: 99%

Aerosol-assisted CVD of cadmium diselenoimidodiphosphinate and formation of a new ⁱPr₂N₂P₃⁺ ion supported by combined DFT and mass spectrometric studies

et al. 2016

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Aerosol-assisted chemical vapour deposition (AACVD) of Cd[(SeP i Pr2)2N]2 is shown to deposit cadmium selenide and/or cadmium phosphide on glass substrates, dependent upon the growth conditions. The phase, structure, morphology and composition of the films were characterised by X-ray powder diffraction (XRD), scanning electron microscopy, energy dispersive X-ray analysis and X-ray photoelectron spectroscopy. The XRD indicated an hexagonal phase for cadmium selenide, whilst cadmium phosphide was monoclinic. Pyrolysis gas chromatography-mass spectrometer and density functional theory were used to deduce a breakdown mechanism for the deposition that favoured the formation of a new aromatic i Pr2N2P3 + ion.

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CdTe/CdS solar cells on flexible substrates

Cited by 177 publications

References 15 publications

Structural, optical, and electrical properties of electron beam evaporated CdSe thin films

Structural, optical, and electrical properties of electron beam evaporated CdSe thin films

Characterization of CdTe thin films grown on glass by hot wall epitaxy

Aerosol-assisted CVD of cadmium diselenoimidodiphosphinate and formation of a new ⁱPr₂N₂P₃⁺ ion supported by combined DFT and mass spectrometric studies

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CdTe/CdS solar cells on flexible substrates

Cited by 177 publications

References 15 publications

Structural, optical, and electrical properties of electron beam evaporated CdSe thin films

Structural, optical, and electrical properties of electron beam evaporated CdSe thin films

Characterization of CdTe thin films grown on glass by hot wall epitaxy

Aerosol-assisted CVD of cadmium diselenoimidodiphosphinate and formation of a new iPr2N2P3+ ion supported by combined DFT and mass spectrometric studies

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Aerosol-assisted CVD of cadmium diselenoimidodiphosphinate and formation of a new ⁱPr₂N₂P₃⁺ ion supported by combined DFT and mass spectrometric studies