CdSe nanowires with controllable growth orientations

Shan, Chongxin; Liu, Z.; Hark, S. K.

doi:10.1063/1.2737377

Cited by 44 publications

(26 citation statements)

References 23 publications

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“…The modulation of nanowire orientation through growth temperature change has been reported by several groups. Shan et al found that temperature controlled the preferred growth direction of wurtzite CdSe nanowires grown on GaAs substrates using MOCVD [113]. When grown at 480 • C, most CdSe nanowires grew along the substrate 1 1 0 direction whereas at a higher temperature of 500 • C the nanowires preferred the 1 1 1 direction, in both cases irrespective of the substrate orientation.…”

Section: 41mentioning

confidence: 99%

Metal-catalyzed semiconductor nanowires: a review on the control of growth directions

Fortuna

2010

Semicond. Sci. Technol.

233

239

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Semiconductor nanowires have become an important building block for nanotechnology. The growth of semiconductor nanowires using a metal catalyst via the vapor-liquid-solid (VLS) or vapor-solid-solid (VSS) mechanism has yielded growth directions in 1 1 1 , 1 0 0 and 1 1 0 etc. In this paper, we summarize and discuss a broad range of factors that affect the growth direction of VLS or VSS grown epitaxial semiconductor nanowires, providing an indexed glimpse of the control of nanowire growth directions and thus the mechanical, electrical and optical properties associated with the crystal orientation. The prospect of using planar nanowires for large area planar processing toward future nanowire array-based nanoelectronics and photonic applications is discussed.

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Section: 41mentioning

confidence: 99%

Metal-catalyzed semiconductor nanowires: a review on the control of growth directions

Fortuna

2010

Semicond. Sci. Technol.

233

239

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“…special properties and the potential applications in many fields [1][2][3][4][5][6][7][8][9][10][11][12].…”

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confidence: 99%

Morphology-controlled synthesis and characterization of urchin-like CdS and nanowire

et al. 2012

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Novel urchin-like CdS was synthesized via a facile solvothermal route without any assistant agent. The as-prepared samples were characterized by X-ray diffraction, scanning electron microscopy, transmission electron microscope, high-resolution transmission electron, and photoluminescence spectrophotometer. Based on time-resolved experiments, a possible growth mechanism of 3D urchinlike CdS microspheres was initially proposed. Furthermore, morphology control of CdS was achieved by adjusting the quantity addition of TGA to obtain the 1D CdS nanowires.

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“…INTRODUCTION Semiconductor nanowires (NWs), such as ZnO, [1][2][3][4] CdS, 5,6 CdSe, 7-10 GaN [11][12][13] NWs, have attracted a lot of attention in the past 20 years because of their superior characteristics in magnetic, optical, and electrical properties. Especially, many CdSe low-dimensional structures, such as nanowires [7][8][9][10] and quantum dots (QDs), [14][15][16] have been fabricated in the experiment.…”

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confidence: 99%

Magneto-optical spectrum and the effective excitonic Zeeman splitting energies of Mn and Co-doped CdSe nanowires

Xiong

Chen

2013

Journal of Applied Physics

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Electronic structures in a CdSe spherical quantum dot in a magnetic field: Diagonalization method and variational methodThe electronic structure of Mn and Co-doped CdSe nanowires are calculated based on the six-band k Á p effective-mass theory. Through the calculation, it is found that the splitting energies of the degenerate hole states in Mn-doped CdSe nanowires are larger than that in Co-doped CdSe nanowires when the concentration of these two kinds of magnetic ions is the same. In order to analysis the magneto-optical spectrum of Mn and Co-doped CdSe nanowires, the four lowest electron states and the four highest hole states are sorted when the magnetic field is applied, and the 10 lowest optical transitions between the conduction subbands and the valence subbands at the C point in Mn and Co-doped CdSe nanowires are shown in the paper, it is found that the order of the optical transitions at the C point almost do not change although two different kinds of magnetic ions are doped in CdSe nanowires. Finally, the effective excitonic Zeeman splitting energies at the C point are found to increase almost linearly with the increase of the concentration of the magnetic ions and the magnetic field; meanwhile, the giant positive effective excitonic g factors in Mn and Co-doped CdSe nanowires are predicted based on our theoretical calculation. V C 2013 AIP Publishing LLC. [http://dx.

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CdSe nanowires with controllable growth orientations

Cited by 44 publications

References 23 publications

Metal-catalyzed semiconductor nanowires: a review on the control of growth directions

Metal-catalyzed semiconductor nanowires: a review on the control of growth directions

Morphology-controlled synthesis and characterization of urchin-like CdS and nanowire

Magneto-optical spectrum and the effective excitonic Zeeman splitting energies of Mn and Co-doped CdSe nanowires

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