Cd dopant effect on structural and optoelectronic properties of TiO2 solar detectors

İlhan, Mustafa; Koç, Mümin Mehmet; Çoşkun, Burhan; Erkovan, Mustafa; Yakuphanoğlu, F.

doi:10.1007/s10854-020-05000-3

Cited by 18 publications

(5 citation statements)

References 56 publications

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“…It can be seen that TiO 2 -NA has an absorption band in the UV-vis region around 400-420 nm. After the TiO 2 -NA surface was modified with CdO-QDs, the variation in the UVvis intensity of CdO-QDs/TiO 2 -NA mp-films was similar to that of TiO 2 -NA mp-film and the absorption intensity of the composite film was slightly reduced (red curve) in the UV and visible regions [17,18]. A broad visible absorption band around 400-420 nm is also seen.…”

Section: Resultsmentioning

confidence: 77%

Performance enhancement of perovskite solar cells based on a CdO-quantum dot/TiO₂-nanocrystal array electron transport layer

Su¹,

Wang²,

Wu³

et al. 2022

Semicond. Sci. Technol.

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Oriented TiO2 nanocrystal array (TiO2-NA) shows unique electron extraction capability for perovskite solar cells (PSCs), due to its fewer grain boundaries and high crystallinity for effective charge collection. Based on the above advantages, we prepare the PSC based on TiO2-NA mesoporous film (mp-film), and chose CdO quantum dots as the modifier of TiO2-NA mp-film. The diameter of single TiO2-NA and gap of TiO2-NAs were controlled by controlling hydrothermal time. And CdO-QDs/TiO2-NA mp-film was prepared by successive ionic layer adsorption and reaction (SILAR)-sintering method as the ETL. In this work, oxidation state quantum dot CdO (CdO-QDs) as modifier was firstly used in the ETL of PSC, we gradually optimized CdO/TiO2-NA mesoporous film (mp-film) by control the hydrothermal time of TiO2-NA to improve PSC performances. Infiltration of perovskite adsorber submicrometer-thick rutile TiO2-NA mp-films with Spiro-MeOTAD yielded a strikingly high PCE of 11.94% under AM 1.5G illumination. Dependences of photovoltaic performance and interfacial electronic behavior on the length of CdO/TiO2-NA were also investigated

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Section: Resultsmentioning

confidence: 77%

Performance enhancement of perovskite solar cells based on a CdO-quantum dot/TiO₂-nanocrystal array electron transport layer

Su¹,

Wang²,

Wu³

et al. 2022

Semicond. Sci. Technol.

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“…This result highlighted that the fabricated devices have good responsivity to the light illumination. [ 57 ] Moreover, the current increased almost linearly on both the Al/CoPOM/p‐Si and Al/NiPOM/p‐Si devices with increasing light power intensity and maximum current were obtained for 100 mW cm ‐2 values. The rise and fall times of the devices were obtained as 800 ms for both the Al/CoPOM/p‐Si and Al/NiPOM/p‐Si devices (in Figure S6a,b, Supporting Information).…”

Section: Resultsmentioning

confidence: 97%

Electrical Behaviors of the Co‐ and Ni‐Based POMs Interlayered Schottky Photodetector Devices

Yıldırım

Koçyiğit

Torlak

et al. 2022

Adv Materials Inter

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Polyoxometalates (POMs) are high-oxidation-state transition metal-oxide clusters with a diverse range of properties that render their attractive candidates for a great deal of Polyoxometalates (POMs) are attractive materials for various applications such as energy storage, catalysis and medicine. Here, Co and Ni-based POMs are chemically synthesized and characterized by X-ray diffractometer (XRD) and Fourier transform infrared spectroscopies (FT-IR) for structural characterization. While the morphological behaviors are analyzed by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and atomic force microscopy (AFM), the optical properties are investigated by UV-Vis spectrometer. Electrochemical characterizations are carried out by cyclic voltammetry to determine oxidation levels of the metal centers in the POMs. The CoPOM and NiPOM are inserted in between the Al metal and p-Si semiconductor to obtain Al/CoPOM/p-Si and Al/NiPOM/ p-Si Schottky-type photodetector devices. Current-voltage (I-V) and currenttransient (I-t) measurements are employed to understand the electrical properties of the Al/CoPOM/p-Si and Al/NiPOM/p-Si devices under dark and various light power intensities. The devices exhibit phototransistor like I-V characteristics in forward biases due to having POMs active layers. Various device parameters are extracted from the I-V measurements and discussed in details. I-t measurements are performed to determine various detector parameters such as responsivity and specific detectivity values for under 2 V and zero biases. The Al/CoPOM/p-Si and Al/NiPOM/p-Si Schottky-type photodetector devices can be employed in optoelectronic applications.

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“…The devices can be thought of for photodetector and photodiode applications due to having light induced currents for increasing light power intensity. [ 59,60 ] The current values are higher at forward biases than reverse biases even if light illumination conditions. Thus, the devices can be employed in photodiode applications.…”

Section: Resultsmentioning

confidence: 99%

Schottky type photodiodes with organic Co‐complex and Cd‐complex interlayers

Koçyiğit

Hussaini

Yıldırım

et al. 2022

Applied Organom Chemis

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Cd and Co metal centered nicotinamide/nicotinic acid complexes were synthesized by chemical reactions. The complexes were characterized by thermogravimetric analysis (TGA), Fourier transform infrared spectroscopy (FT‐IR), powder X‐ray diffractometer (P‐XRD), ultraviolet–visible (UV–Vis) spectrometer, and scanning electron microscopy (SEM) with energy dispersive X‐ray (EDX) detector. The complexes were used as interfacial layers in between Al and p‐Si to fabricate Al/Cd‐complex/p‐Si and Al/Co‐complex/p‐Si metal semiconductor devices. The devices were characterized by current–voltage (I‐V) and current‐time (I‐t) measurements under dark and various light power intensities. The ideality factor, barrier height, and series resistance values were extracted from I‐V measurements and discussed in detail by various techniques. The I‐t measurements were used to derive various detector parameters such as responsivity, photosensitivity, and specific detectivity for various power values and wavelength regions. The devices exhibited good photodiode and photodetector performance according to results, and they can be improved for optoelectronic applications.

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Cd dopant effect on structural and optoelectronic properties of TiO2 solar detectors

Cited by 18 publications

References 56 publications

Performance enhancement of perovskite solar cells based on a CdO-quantum dot/TiO₂-nanocrystal array electron transport layer

Performance enhancement of perovskite solar cells based on a CdO-quantum dot/TiO₂-nanocrystal array electron transport layer

Electrical Behaviors of the Co‐ and Ni‐Based POMs Interlayered Schottky Photodetector Devices

Schottky type photodiodes with organic Co‐complex and Cd‐complex interlayers

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Cd dopant effect on structural and optoelectronic properties of TiO2 solar detectors

Cited by 18 publications

References 56 publications

Performance enhancement of perovskite solar cells based on a CdO-quantum dot/TiO2-nanocrystal array electron transport layer

Performance enhancement of perovskite solar cells based on a CdO-quantum dot/TiO2-nanocrystal array electron transport layer

Electrical Behaviors of the Co‐ and Ni‐Based POMs Interlayered Schottky Photodetector Devices

Schottky type photodiodes with organic Co‐complex and Cd‐complex interlayers

Contact Info

Product

Resources

About

Performance enhancement of perovskite solar cells based on a CdO-quantum dot/TiO₂-nanocrystal array electron transport layer

Performance enhancement of perovskite solar cells based on a CdO-quantum dot/TiO₂-nanocrystal array electron transport layer