CD control comparison of step-and-repeat versus step-and-scan DUV lithography for sub-0.25-μm gate printing

Ronse, Kurt G.; Maenhoudt, Mireille; Marschner, T.; hove, Luc Van den; Streefkerk, Bob; Finders, Jo; Schoot, Jan B.P. van; Luehrmann, Paul Frank; Minvielle, Anna Maria

doi:10.1117/12.310789

Cited by 4 publications

(2 citation statements)

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“…In our case, it was a locally pronounced case of coma [2]. Other authors found out that variations of reticle CD's cause heavy intrafield variations of final gate CD's [3]. In our case, the reticle CD's are well controlled.…”

Section: Introductionsupporting

confidence: 59%

Intra-field effects on device and circuit manufacturability: a statistical simulation approach

Krivokapić

Heavlin²

1999

IEEE Trans. Semicond. Manufact.

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In spite of the numerous improvements in deep ultraviolet (DUV) lithography, minimizing lens aberrations remains critical to obtaining manufacturable logic technologies. In this paper, we investigate the effects of lens imperfections on the distributions of process, device, and circuit parameters. Lens imperfections, as manifested by intrafield gate critical dimension (CD) variations, can affect device and circuit parameters strongly. The latter is central to designing fast high-yielding logic products, especially microprocessors. Our approach employs process, device, and statistical simulations, coupled with extensive calibration, to predict manufacturing distributions for a new technology well before it is ramped to full-scale production. We study nominal channel length n-and p-channel devices, inverter ring oscillators, and four-input NAND standard cells. We compare different stepper conditions both for conventional and annular illumination. We consider the case of more than one die in a reticle field and investigate how lens imperfections affects different dice therein. We apply our approach to an experimental DUV stepper and demonstrate coma effects that potentially lower yields. Our results also include a paradox: the best annular illumination case, which betters the CD distributions of conventional illumination, ultimately yields worse circuit performance. 0894-6507/99$10.00 © 1999 IEEE Zoran Krivokapic (M'92-SM'98) received B.Sc. and M.Sc. degrees in physics and the Ph.D. degree in electrical engineering from University of Ljubljana, Slovenia. From 1983 to 1989, he worked

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Section: Introductionsupporting

confidence: 59%

Intra-field effects on device and circuit manufacturability: a statistical simulation approach

Krivokapić

Heavlin²

1999

IEEE Trans. Semicond. Manufact.

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“…Additionally, each reticle has its own image size characteristic due to variations in the mask-making process [6,7]. Initially, dose settings were manually calculated by referring to a paper logbook of past settings and errors.…”

Section: Introductionmentioning

confidence: 99%

Automated photolithography critical dimension controls in a complex, mixed technology, manufacturing fab

Schneider

Smyth²,

Watts³

2001 IEEE/SEMI Advanced Semiconductor Manufacturing Conference (IEEE Cat. No.01CH37160)

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Critical dimension control is one of the most difficult challenges in semiconductor manufacturing. In the photolithography area, factors associated with individual technologies, lithography tools, product levels, reticles, and specific product specifications dictate unique exposure conditions for each lithography tool setup. In a multi-partnumber, mixed technology environment, sophisticated controls are required to ensure that the correct exposure conditions are used for each wafer processed. A to manufacturing. A key feature of the system is its ability to learn the character of each reticle as well as the differences between each lithography tool. The initial exposure dose used for a new reticle is based on the normalization of data from similar reticles and known tool-to-tool differences. Factors saved for each tool may be adjusted to correct for maintenance activities that introduce significant shifts to a tool's historic exposure settings. Examples which demonstrate each of the major components of the controls system's capabilities will be presented.

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Some challenges for mask making to keep up with the roadmap

et al. 1998

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This paper discusses the need for additional mask quality factors for implementation into a further roadmap.These factors are expected to affect the printed image on wafer. Especially the global idea of pattern fidelity is introduced. Low voltage scanning electron microscopy can offer the capability to mask makers to deliver this extra information. This knowledge should lead to a better understanding how mask imperfections may contribute to the overall lithography error budget. This understanding will need to rely 011 stronger collaboration between mask maker and mask user. Using simulation data and the so-called mask error factor, it is shown that certain mask strategies may allow larger mask error budgets.

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CD control comparison of step-and-repeat versus step-and-scan DUV lithography for sub-0.25-μm gate printing

Cited by 4 publications

References 0 publications

Intra-field effects on device and circuit manufacturability: a statistical simulation approach

Intra-field effects on device and circuit manufacturability: a statistical simulation approach

Automated photolithography critical dimension controls in a complex, mixed technology, manufacturing fab

Some challenges for mask making to keep up with the roadmap

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