Cd and Te Dislocations in CdTe

Abstract

It seems probable that two types of 60° edge dislocation exist in CdTe because of the geometrical polarity. In fact, such types of dislocations can be made visible as different etch pit figures with two kinds of etches. Two types of bendings were applied for the introduction of either excess-Cd or excess-Te dislocations. On each bending two types of dislocations were simultaneously brought about with a minimum in density near the neutral plane. However, annealing at high temperature resulted in a uniform distribution of dislocations and a polygonization of the crystal. Furthermore, it was found that dislocations of the correct sign, necessary to produce the required configuration of bending, were predominantly conserved while unexpected dislocations were thermally annihilated during the polygonization process.

Lattice Relaxation and Dislocation Reduction in MBE CdTe(211)B/Ge(211)

“…The stoichiometry of the CdTe layer could also cause an imbalance in the density of dislocation cores nucleated on the {111}A and B glide planes. 22 These two types of dislocations are probably characterized by different glide velocities and therefore react differently to biaxial stress.…”

Indentation-introduced dislocation rosettes and their effects on the carrier transport properties of CdZnTe crystal

“…Thus, when the compressive stress is applied on the (111) Te face with an indenter at room temperature, dislocations preferentially propagate along <110> direction on the (111) (111) and (111) faces or vice versa on the (111) Cd surface according to Thompson's theory. 18 Moreover, it is clear that the EPD related to tetrahedron OEDF is much higher than that of OABC, as shown in Fig. By step-wise removal of surface layers until the indenter disappear from the surface ( Fig.…”

“…It is considered in principle that the most possible slip system in zinc-blende, as well as fcc crystals is a/2 <110> {111}. The volume glide along the EAT for the (111) Te face is probably identified as Te(g) dislocations, 18 whereas the IAT is identified as Cd(g) dislocations. 17 This can obtain an appropriate interpretation that the dislocations arranged along the <110> direction are preferred.…”

Bulk Growth of CdZnTe/CdTe Crystals

“…The etchant proposed by Nakagawa is popular and reliable for the (111) face [15]. Other etch solutions proposed by Inoue et al [21] and Everson et al [22] are also used. However, the consistency of dislocation-density measurements between the methods is still controversial.…”