“…where C SENS is the electrostatic capacity of the sensing area, C FD is the electrostatic capacity of floating diffusion, and Á' sig is the amount of change in surface potential, which is proportional to the difference in input signals at the sensing area. [23][24][25] The GaN-based PD wafer, separated from the substrate by the laser lift-off technique, 26,27) is bonded using metal on the Si-MOS wafer, in which the source/drain and gate oxide are fabricated. The bonding metal is used as a gate electrode.…”