CBE growth of GaN on GaAs(0 0 1) and (1 1 1)B substrates using monomethylhydrazine

Sasaki, Masahiro; Yonemura, Sota; Nakayama, Tomonobu; Shimoyama, Norio; Suemasu, Takashi; Hasegawa, Fumio

doi:10.1016/s0022-0248(99)00573-4

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Cited by 3 publications

(1 citation statement)

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“…High-quality ZnO has been grown on GaN on sapphire by CVD [2]. On the other hand, the growth of GaN on Si (111) [4] and GaAs [5][6][7][8][9] has also been reported.…”

Section: Introductionmentioning

confidence: 99%

Optical properties of ZnSe on GaN (0001) grown by MBE

Ichinohe

Kyoh

Honma

et al. 2009

Journal of Crystal Growth

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“…High-quality ZnO has been grown on GaN on sapphire by CVD [2]. On the other hand, the growth of GaN on Si (111) [4] and GaAs [5][6][7][8][9] has also been reported.…”

Section: Introductionmentioning

confidence: 99%

Optical properties of ZnSe on GaN (0001) grown by MBE

Ichinohe

Kyoh

Honma

et al. 2009

Journal of Crystal Growth

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Coordination Complexes as Precursors for Semiconductor Films and Nanoparticles

O’Brien

Pickett

2003

Comprehensive Coordination Chemistry II

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Superiority of an AlN Intermediate Layer for Heteroepitaxy of Hexagonal GaN

Sasaki

Nakayama

Shimoyama³

et al. 2000

Jpn. J. Appl. Phys.

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The superiority of AlN as an intermediate layer during heteroepitaxy of GaN on GaAs substrates is demonstrated on the basis of growth rates, surface reactivity and crystallography. Although GaN growth on GaAs using monomethyl-hydrazine (MMHy) as a nitrogen source shows a long lag time to start growth, this lag time disappears upon the insertion of an AlN intermediate layer. Based on mass spectrometric analysis, these growth behaviors are attributed to the decomposition of MMHy which is enhanced by the Al source injection onto GaAs surfaces. The growth mechanism is explained within a framework of simple bond behavior. Further, it is confirmed by pole figure X-ray diffraction observations that a single phase hexagonal GaN layer is grown on GaAs(111)B substrates when the AlN intermediate layer is inserted, while a cubic phase is included in the GaN grown directly on the GaAs(111)B surface.

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CBE growth of GaN on GaAs(0 0 1) and (1 1 1)B substrates using monomethylhydrazine

Cited by 3 publications

References 11 publications

Optical properties of ZnSe on GaN (0001) grown by MBE

Optical properties of ZnSe on GaN (0001) grown by MBE

Coordination Complexes as Precursors for Semiconductor Films and Nanoparticles

Superiority of an AlN Intermediate Layer for Heteroepitaxy of Hexagonal GaN

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