Cautions to predicate multiferroic by atomic force microscopy

Liu, Chen; Ma, Jing; Ma, Ji; Zhang, Yujun; Chen, Jiahui; Nan, Ce‐Wen

doi:10.1063/1.4983271

Cited by 8 publications

(10 citation statements)

References 32 publications

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“…This is presumably due to the influence of the electrostatic force in the poled region. 27 Figure 4a−d and e−h are magnified views of areas (i) and (ii), respectively in Figure 3c. An almost identical striped domain structure is observed after the poling in area (i) with the in-plane polarization direction unchanged, as shown in Figure 4a.c, indicating that pure out-of-plane 71°domain switching occurred in this area.…”

mentioning

confidence: 99%

Direct Observation of Magnetization Reversal by Electric Field at Room Temperature in Co-Substituted Bismuth Ferrite Thin Film

et al. 2019

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Using the electric field to manipulate the magnetization of materials is a potential way of making low-power-consumption nonvolatile magnetic memory devices. Despite concentrated effort in the last 15 years on magnetic multilayers and magnetoelectric multiferroic thin films, there has been no report on the reversal of out-of-plane magnetization by an electric field at room temperature without the aid of an electric current. Here, we report direct observation of out-of-plane magnetization reversal at room temperature by magnetic force microscopy after electric polarization switching of cobalt-substituted bismuth ferrite thin film grown on (110) o -oriented GdScO 3 substrate. A striped pattern of ferroelectric and weakly ferromagnetic domains was preserved after reversal of the out-of-plane electric polarization.

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confidence: 99%

Direct Observation of Magnetization Reversal by Electric Field at Room Temperature in Co-Substituted Bismuth Ferrite Thin Film

et al. 2019

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“…Note that the magnetic state switches between single-domain and multidomain under negative and positive poling, since the accumulation and loss of oxygen vacancies near the surface change its spin alignment between T d and O h sites in Fe 3 O 4 from ferromagnetic (parallel and thus single-domain) to antiferromagnetic (antiparallel and thus multidomain) coupling, leading to the observed asymmetry in switching behavior. Since MFM mappings may be interfered by the electrostatic interaction between the surface charges and the tip, , the MFM data were also acquired using tips with reversed magnetization, leading to reversed polarity contrast for both negatively and positively poled regions (see Figure S7a–d for details, and the corresponding topography were not changed in Figure S7e,f). It is thus concluded that the magnetization reversal by an electric field as revealed by MFM is not an artifact and the influence of possible electrostatic interactions can be excluded.…”

Section: Resultsmentioning

confidence: 99%

Deterministic, Reversible, and Nonvolatile Low-Voltage Writing of Magnetic Domains in Epitaxial BaTiO₃/Fe₃O₄ Heterostructure

Zhong

Bitla

et al. 2018

ACS Nano

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The ability to electrically write magnetic bits is highly desirable for future magnetic memories and spintronic devices, though fully deterministic, reversible, and nonvolatile switching of magnetic moments by electric field remains elusive despite extensive research. In this work, we develop a concept to electrically switch magnetization via polarization modulated oxygen vacancies, and we demonstrate the idea in a multiferroic epitaxial heterostructure of BaTiO/FeO fabricated by pulsed laser deposition. The piezoelectricity and ferroelectricity of BaTiO have been confirmed by macro- and microscale measurements, for which FeO serves as the top electrode for switching the polarization. X-ray absorption spectroscopy and X-ray magnetic circular dichroism spectra indicate a mixture of Fe and Fe at O sites and Fe at T sites in FeO, while the room-temperature magnetic domains of FeO are revealed by microscopic magnetic force microscopy measurements. It is demonstrated that the magnetic domains of FeO can be switched by not only magnetic fields but also electric fields in a deterministic, reversible, and nonvolatile manner, wherein polarization reversal by electric field modulates the oxygen vacancy distribution in FeO, and thus its magnetic state, making it attractive for electrically written magnetic memories.

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“…10b indicate reduced Mr due to the compressive strain in CFO phase [19]. Since MFM is generally intended to characterize electric control of magnetism in ME composite samples, this reduction of M r with the application of electric voltage provides a conclusive evidence of the presence of electric field induced ME coupling in the composite samples [20][21][22]. (1-x)BNT/BT-xCFO (where x = 0.1, 0.2, 0.3, 0.4, 0.5) composite samples were sintered at 1050°C for 15 min in microwave furnace.…”

Section: Magneto-dielectric Studymentioning

confidence: 99%

Evidence of magneto-electric coupling and electrical study of CFO modified BNT/BT composites

Nanda¹,

Samanta²,

Goel³

et al. 2020

PAC

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(1-x)(0.93Bi 0.5 Na 0.5 TiO 3 /0.07BaTiO 3)-xCoFe 2 O 4 ((1-x)BNT/BT-xCFO, where x = 0.1, 0.2, 0.3, 0.4 and 0.5) composite samples were synthesized by microwave assisted solid state reaction route and sintered at 1050°C. X-ray diffraction study showed the presence of ferroelectric/ferromagnetic (FE/FM) phases without any peak of secondary phase. This was further confirmed by SEM study showing the presence of both FE/FM grains distinctly. Frequency dependent dielectric study showed maximum dielectric constant (ε r) for the composite sample with x = 0.4. Polarization versus electric field (P-E) loop study revealed that maximum remnant polarization (2P r = 1.75 µC/cm 2) was found also for the 0.6BNT/BT-0.4CFO sample. Remnant magnetization (M r) of the composite sample with x = 0.4 was found to be ∼7.81 emu/g. Magnetodielectric (MD) study of the 0.6BNT/BT-0.4CFO composite sample showed decrease in ε r with the application of magnetic field and a MD effect of ∼2.4% (at 10 kHz) was found. Low leakage current value (∼10 −4 A) was obtained in the 0.6BNT/BT-0.4CFO composite sample. Change in piezoresponse force microscopy contrast after poling indicated on the changes in polarization of the ferroelectric domains. Reduction in M r , observed in magnetic force microscopy contrast gave a clear evidence of presence of electric field induced magneto-electric (ME) coupling in the 0.6BNT/BT-0.4CFO composite sample.

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Cautions to predicate multiferroic by atomic force microscopy

Cited by 8 publications

References 32 publications

Direct Observation of Magnetization Reversal by Electric Field at Room Temperature in Co-Substituted Bismuth Ferrite Thin Film

Direct Observation of Magnetization Reversal by Electric Field at Room Temperature in Co-Substituted Bismuth Ferrite Thin Film

Deterministic, Reversible, and Nonvolatile Low-Voltage Writing of Magnetic Domains in Epitaxial BaTiO₃/Fe₃O₄ Heterostructure

Evidence of magneto-electric coupling and electrical study of CFO modified BNT/BT composites

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Cautions to predicate multiferroic by atomic force microscopy

Cited by 8 publications

References 32 publications

Direct Observation of Magnetization Reversal by Electric Field at Room Temperature in Co-Substituted Bismuth Ferrite Thin Film

Direct Observation of Magnetization Reversal by Electric Field at Room Temperature in Co-Substituted Bismuth Ferrite Thin Film

Deterministic, Reversible, and Nonvolatile Low-Voltage Writing of Magnetic Domains in Epitaxial BaTiO3/Fe3O4 Heterostructure

Evidence of magneto-electric coupling and electrical study of CFO modified BNT/BT composites

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Deterministic, Reversible, and Nonvolatile Low-Voltage Writing of Magnetic Domains in Epitaxial BaTiO₃/Fe₃O₄ Heterostructure